I. Yoshida

发表

High-frequency semiconductor devices for mobile telecommunication systems

C. Kusano, K. Sato, I. Yoshida, 1997 .

Computer analysis of breakdown mechanism in planar power MOSFET's

I. Yoshida, M. Nagata, T. Okabe, 1980, IEEE Transactions on Electron Devices.

A high power MOSFET with a vertical drain electrode and a meshed gate structure

I. Yoshida, M. Kubo, S. Ochi, 1976, IEEE Journal of Solid-State Circuits.

Aging time dependence of catastrophic optical damage (COD) failure of a 0.98-mum GaInAs-GaInP strained quantum-well laser

I. Yoshida, T. Katsuyama, J. Hashimoto, 1997 .