J. B. Dufrene

High-voltage (600 to 3 kV) silicon carbide diode development

Michael S. Mazzola, Jeffrey B. Casady, I. Sankin, 2001, APEC 2001. Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.01CH37181).

A review of SiC static induction transistor development for high-frequency power amplifiers

Jeffrey B. Casady, J. B. Dufrene, Y. M. Sung, 2001 .

Comparison and optimization of edge termination techniques for SiC power devices

John D. Cressler, Guofu Niu, J. B. Dufrene, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

Hydrogen interaction with defects and impurities in 6H-SiC

J. B. Dufrene, J. Casady, Y. Koshka, 2003 .

Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination

J. Neil Merrett, J. B. Dufrene, J. Casady, 2003 .