Hank Cheng

15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications

Hidehiro Fujiwara, Hung-Jen Liao, Yen-Huei Chen, 2020, 2020 IEEE International Solid- State Circuits Conference - (ISSCC).

A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications

Hidehiro Fujiwara, Tsung-Yung Jonathan Chang, Hung-Jen Liao, 2021, IEEE Journal of Solid-State Circuits.