A. N. Tallarico

TCAD investigation on hot-electron injection in new-generation technologies

Enrico Sangiorgi, Claudio Fiegna, Antonio Gnudi, 2018, Microelectron. Reliab..

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level

Gaudenzio Meneghesso, Stefaan Decoutere, Enrico Zanoni, 2017, Microelectron. Reliab..

TCAD predictions of hot-electron injection in p-type LDMOS transistors

A. Gnudi, C. Fiegna, E. Sangiorgi, 2019, ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC).

Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors

C. Fiegna, E. Sangiorgi, S. Reggiani, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide

Enrico Sangiorgi, Paolo Magnone, Claudio Fiegna, 2017, Microelectron. Reliab..

Characterization and Modeling of BTI in SiC MOSFETs

C. Fiegna, E. Sangiorgi, F. Crupi, 2019, ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC).

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

S. Decoutere, C. Fiegna, B. Bakeroot, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).