Katsuyoshi Washio

发表

A 59GHz push-push VCO with 13.9GHz tuning range using loop-ground transmission line for a full-band 60GHz transceiver

Takahiro Nakamura, Toru Masuda, Katsuyoshi Washio, 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

Simplified Distribution Base Resistance Model in Self-Aligned Bipolar Transistors (Special Issue on Microelectronic Test Structure)

Katsuyoshi Washio, M. Tanabe, Hiromi Shimamoto, 1996 .

Design aspects of 32.7-GHz bandwidth AGC amplifier IC with wide dynamic-range implemented in SiGe HBT

Toru Masuda, Katsuyoshi Washio, K. Ohhata, 1998, Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).

High-Frequency, Low-Noise Si Bipolar Transistor Fabricated Using Self-Aligned Metal/IDP Technology

Katsuyoshi Washio, M. Tanabe, Hiromi Shimamoto, 1999 .

High-Speed High-Density Self-Aligned PNP Technology for Low-Power Complementary Bipolar ULSIs

Katsuyoshi Washio, Hiromi Shimamoto, Tohru Nakamura, 1995 .

A Push-Push VCO With 13.9-GHz Wide Tuning Range Using Loop-Ground Transmission Line for Full-Band 60-GHz Transceiver

Takahiro Nakamura, Toru Masuda, Katsuyoshi Washio, 2012, IEEE Journal of Solid-State Circuits.

Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors (Special Issue on Microelectronic Test Structure)

Katsuyoshi Washio, M. Tanabe, Hiromi Shimamoto, 1996 .

An all-band TV tuner IC with 10 GHz/100 V mixed analog/digital Si bipolar technology

Shigeya Tanaka, Katsuyoshi Washio, Takeaki Okabe, 1990 .

DC and AC Performances in Selectively Grown SiGe-Base HBTs

Katsuyoshi Washio, M. Tanabe, Hiromi Shimamoto, 1999 .

MMICs Using SiGe BiCMOS for Ubiquitous Wireless Network

Toru Masuda, Katsuyoshi Washio, Takahiro Nakamura, 2007 .

Bipolar Device and Circuit Technologies for Future Wireless Communications

Takahiro Nakamura, Toru Masuda, Katsuyoshi Washio, 2009 .

Scalable transformer model based on ladder topological equivalent circuit for Si RFICs

Toru Masuda, Katsuyoshi Washio, Takahiro Nakamura, 2010, 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).

High‐speed self‐aligned SiGe HBT and application to optical‐fiber‐link ICs

K. Ohhata, Masao Kondo, Katsuyoshi Washio, 2002 .

Process and device technologies for high speed self-aligned bipolar transistors

Noriyuki Homma, Katsuyoshi Washio, Takahiro Onai, 1995 .

SiGe HBT amplifiers with high image rejection for quasi-millimeter-wave frequency range

Toru Masuda, Katsuyoshi Washio, Takahiro Nakamura, 2010, 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).

Low-power K-band pseudo-stacked mixer with linearity enhancement technique

Toru Masuda, Katsuyoshi Washio, Takahiro Nakamura, 2009, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

A 24-GHz low-power fully integrated receiver with image-rejection using Rich-Transformer Direct-Stacked/Coupled technique

Toru Masuda, Katsuyoshi Washio, Takahiro Nakamura, 2010, 2010 IEEE Radio Frequency Integrated Circuits Symposium.

A 20-GHz 1-V VCO with dual-transformer configuration and a pseudo-static divider on self-stabilized concept

Toru Masuda, Katsuyoshi Washio, Takahiro Nakamura, 2009, 2009 Proceedings of ESSCIRC.

SELF-ALIGNED Si BJT/SiGe HBT TECHNOLOGY AND ITS APPLICATION TO HIGH-SPEED CIRCUITS

Katsuyoshi Washio, 2001 .

Low ACPR Characteristics for WCDMA Applications of SiGe: C HBT Devices with Small Emitter Capacitance

Masao Kondo, Katsuyoshi Washio, Isao Miyashita, 2006, IEICE Trans. Electron..

High-speed scaled-down self-aligned SEG SiGe HBTs

Katsuyoshi Washio, Hiromi Shimamoto, Makoto Miura, 2003 .

A SiGe HBT IC CHIPSET for40-Gb/s OPTICAL TRANSMISSION SYSTEMS

Toru Masuda, Katsuyoshi Washio, M. Tanabe, 2003 .

Low-Power SiGe HBT and Circuit Technology for Future Quasi-Millimeter-Wave Wireless Communications

Takahiro Nakamura, Toru Masuda, Katsuyoshi Washio, 2009 .

Self-Aligned Metal/IDP Si Bipolar Technology with 12-ps ECL and 45-GHz Dynamic Frequency Divider

Katsuyoshi Washio, Takahiro Onai, Masamichi Tanabe, 1996, ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference.

Self-aligned complementary bipolar technology for low-power dissipation and ultra-high-speed LSIs

Youji Idei, Katsuyoshi Washio, M. Tanabe, 1995 .

Structural dependence on device characteristics for sidewall base contact structure transistor

Kazuo Nakazato, Katsuyoshi Washio, Tohru Nakamura, 1990 .

LOW TRANSIMPEDANCE-FLUCTUATION DESIGN FOR 10-GHz Si-BIPOLAR PREAMPLIFIER IN 10-Gb/s OPTICAL TRANSMISSION SYSTEMS

Ryoji Takeyari, K. Ohhata, Toru Masuda, 1998 .

Performance enhancement of strained-Si MOSFETs fabricated on a chemical-mechanical-polished SiGe substrate

Nobuyuki Sugii, Katsuyoshi Washio, Digh Hisamoto, 2002 .

A wide-dynamic-range, high-transimpedance Si bipolar preamplifier IC for 10-Gb/s optical fiber links

Ryoji Takeyari, K. Ohhata, Toru Masuda, 1997 .

Bipolar Transistors

John D. Cressler, Katsuyoshi Washio, J. Cressler, 2007 .

SiGe HBT and BiCMOS technologies for optical transmission and wireless communication systems

Katsuyoshi Washio, 2003 .

Ultra-low-power and high-speed SiGe base bipolar transistors for wireless telecommunication systems

Katsuyoshi Washio, M. Tanabe, Hiromi Shimamoto, 1998 .

Ultra High Speed Bipolar Device-SICOS

Kazuo Nakazato, Katsuyoshi Washio, Tetsuya Hayashida, 1986 .

A 50-GHz static frequency divider and 40-Gb/s MUX/DEMUX using self-aligned selective-epitaxial-growth SiGe HBTs with 8-ps ECL

Katsuyoshi Washio, M. Tanabe, Hiromi Shimamoto, 2001 .

A 0.2-/spl mu/m 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

Katsuyoshi Washio, M. Tanabe, Hiromi Shimamoto, 2000 .

A 0.2-/spl mu/m self-aligned selective-epitaxial-growth SiGe HBT featuring 107-GHz f/sub max/ and 6.7-ps ECL

Katsuyoshi Washio, M. Tanabe, Eiji Ohue, 2001 .

Design of a 32.7-GHz bandwidth AGC amplifier IC with wide dynamic range implemented in SiGe HBT

K. Ohhata, Toru Masuda, Katsuyoshi Washio, 1999 .

A 50-dB image-rejection SiGe-HBT based low noise amplifier in 24-GHz band

Toru Masuda, Katsuyoshi Washio, Nobuhiro Shiramizu, 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.

Comparison study of V-doped ZnO thin films on polycarbonate and quartz substrates deposited by RF magnetron sputtering

Katsuyoshi Washio, Hiroshi Chiba, Tomoyuki Kawashima, 2016 .

Lamp-heated rapid vapor-phase doping technology for 100-GHz Si bipolar transistors

Katsuyoshi Washio, M. Tanabe, Takahiro Onai, 1996, Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.

DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTs

Katsuyoshi Washio, 2008 .

Self-aligned metal/IDP Si bipolar technology featuring 14 ps/70 GHz

Katsuyoshi Washio, M. Tanabe, Takahiro Onai, 1995, Proceedings of International Electron Devices Meeting.

An NPN 30 GHz, PNP 32 GHz f/sub T/ complementary bipolar technology

Katsuyoshi Washio, M. Tanabe, Hiromi Shimamoto, 1993, Proceedings of IEEE International Electron Devices Meeting.