K. Tone

High performance 32nm logic technology featuring 2nd generation high-k + metal gate transistors

J. Jopling, J. Neirynck, H. Deshpande, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Theoretical and Experimental Study of 4H-SiC Junction Edge Termination

Li Hui Cao, Leonid Fursin, Jian H. Zhao, 2000 .

A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET

Maurice Weiner, Jian H. Zhao, K. Tone, 2002 .

Multistep junction termination extension for SiC power devices

Maurice Weiner, Leonid Fursin, Jian H. Zhao, 2001 .

4H-SiC normally-off vertical junction field-effect transistor with high current density

Jian H. Zhao, K. Tone, M. Weiner, 2003, IEEE Electron Device Letters.

Evaluation of ohmic contacts to p-type 6H-SiC created by C and Al coimplantation

K. Tone, J.H. Zhao, K. Tone, 1997, IEEE Electron Device Letters.

1710-V 2.77-m/spl Omega/cmsub 2 4H-SiC trenched and implanted vertical junction field-effect transistors

K. Tone, M. Weiner, P. Alexandrov, 2003, IEEE Electron Device Letters.