M. Rodder

发表

An experimental 5 ns BiCMOS SRAM with a high-speed architecture

H. Tran, K. Fung, T. Suzuki, 1990, Digest of Technical Papers., 1990 Symposium on VLSI Circuits.

Transistor design issues in integrating analog functions with high performance digital CMOS

H. Shichijo, R. Aggarwal, A. Chatterjee, 1999, 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).

Transistor design with TCAD tuning and device optimization for process/device synthesis

Duane S. Boning, Ih-Chin Chen, A. Chatterjee, 1993, 1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers.

Introductory Remarks: Materials and Process Integration

M. Rodder, S. Ikeda, 2006 .

Modeling of nonhyperbolic sine I-V characteristics in poly-Si resistors

M. Rodder, M. Rodder, 1992, IEEE Electron Device Letters.

Sub-100 nm gate length metal gate NMOS transistors fabricated by a replacement gate process

G.A. Brown, A. Chatterjee, M. Rodder, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Scalning to a 1.0V-1.5V, sub 0.1um Gate Length CMOS Technology: Perspective and Challanges

Ih-Chin Chen, M. Rodder, S. Hattangady, 1998 .

CMOS metal replacement gate transistors using tantalum pentoxide gate insulator

G.A. Brown, A. Chatterjee, M. Rodder, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Correlating drain junction scaling, salicide thickness, and lateral NPN behavior, with the ESD/EOS performance of a 0.25 /spl mu/m CMOS process

A. Amerasekera, M. Rodder, A. Amerasekera, 1996, International Electron Devices Meeting. Technical Digest.

Utilization of plasma hydrogenation in stacked SRAM's with poly-Si PMOSFET's and bulk-Si NMOSFET's

S. Aur, M. Rodder, M. Rodder, 1991, IEEE Electron Device Letters.

NTD germanium: A novel material for low-temperature bolometers

Eugene E. Haller, W. L. Hansen, M. Rodder, 1984 .

Feasibility of using W/TiN as metal gate for conventional 0.13 /spl mu/m CMOS technology and beyond

A. Chatterjee, M. Rodder, R. Chapman, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Performance and reliability enhancement for CVD tungsten polycided CMOS transistors due to fluorine incorporation in the gate oxide

M. Rodder, I.-C. Chen, H.-J. Wann, 1994, IEEE Electron Device Letters.

A 1.2V, sub-0.09 /spl mu/m gate length CMOS technology

S. Aur, M. Rodder, M. Mehrotra, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Silicon-on-insulator bipolar transistors

M. Rodder, D.A. Antoniadis, 1983, IEEE Electron Device Letters.

A pocket implant model for sub-0.18 micron CMOS process flows

M. Nandakumar, K. Vasanth, M. Rodder, 1997, SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.