H. Machhadani

发表

Growth of intersubband GaN/AlGaN heterostructures

M. Albrecht, L. Vivien, A. Castiglia, 2010, OPTO.

III-nitride semiconductors for intersubband devices

S. Sakr, Y. Kotsar, H. Machhadani, 2011, OPTO.

Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics

Lise Lahourcade, H. Machhadani, P. K. Kandaswamy, 2009, Microelectron. J..

Polar and semipolar III-nitrides for long wavelength intersubband devices

S. Sakr, L. Lahourcade, H. Machhadani, 2010, OPTO.

Electrooptical Modulator at Telecommunication Wavelengths Based on GaN–AlN Coupled Quantum Wells

P. Crozat, L. Vivien, E. Monroy, 2008, IEEE Photonics Technology Letters.

Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

Maria Tchernycheva, S. Sakr, Eva Monroy, 2009 .

High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm

Paul Crozat, Raffaele Colombelli, Laurent Vivien, 2008 .

Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures

Maria Tchernycheva, Eva Monroy, Pierre Ruterana, 2008 .