T. Remmele

发表

Growth of intersubband GaN/AlGaN heterostructures

M. Albrecht, L. Vivien, A. Castiglia, 2010, OPTO.

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

I. Grzegory, S. Porowski, P. Prystawko, 2006, SPIE OPTO.

Si‐doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕AlN coupled quantum wells

Paul Crozat, Gottfried Strasser, Anatole Lupu, 2007 .

Strain-induced interface instability in GaN/AlN multiple quantum wells

Francois H. Julien, Eric Feltin, Nicolas Grandjean, 2007 .

Electron confinement in strongly coupled GaN /AlN quantum wells

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

Bi‐stable behaviour in GaN‐based resonant tunnelling diode structures

Gottfried Strasser, Eva Monroy, S. Golka, 2008 .

Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

MBE growth of nitride-based photovoltaic intersubband detectors

Esther Baumann, Daniel Hofstetter, Francois H. Julien, 2006 .

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

Francois H. Julien, Maria Tchernycheva, Marcin Siekacz, 2006 .

Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

Esther Baumann, Daniel Hofstetter, Maria Tchernycheva, 2008 .