Peter Moens

发表

Intelligent PowerFet Technologies and Design Implementation Techniques.

P. Gassot, Peter Moens, K. Appeltans, 2004 .

Trapping induced parasitic effects in GaN-HEMT for power switching applications

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2015, 2015 International Conference on IC Design & Technology (ICICDT).

Effect of the n+sinker in self-triggering bipolar ESD protection structures

Guido Groeseneken, Peter Moens, Vincent De Heyn, 2002, 2002 Electrical Overstress/Electrostatic Discharge Symposium.

Lifetime modeling of intrinsic gate oxide breakdown at high temperature

Peter Moens, Piet Vanmeerbeek, Ward De Ceuninck, 2007, Microelectron. Reliab..

Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs

Philippe Godignon, Peter Moens, Amador Pérez-Tomás, 2012, Microelectron. Reliab..

Breakdown and hot carrier injection in deep trench isolation structures

Guido Groeseneken, Peter Moens, B. Elattari, 2005 .

Field and hot electron-induced degradation in GaN-based power MIS-HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2017, Microelectron. Reliab..

A new LIGBT structure to suppress substrate currents in a junction isolated technology

Jan Doutreloigne, Peter Moens, Benoit Bakeroot, 2005 .

Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS

Geert Van den bosch, Peter Moens, G. V. D. Bosch, 2008, Microelectron. Reliab..

(Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: an industry perspective

Balaji Padmanabhan, Frederick Declercq, Gaudenzio Meneghesso, 2016 .

Electric field unbalance for robust floating ring termination

Peter Moens, Piet Vanmeerbeek, David Flores, 2011, Microelectron. Reliab..

Influence of charge balance on the robustness of trench-based super junction diodes

Andrea Irace, Vincenzo d'Alessandro, Peter Moens, 2012, Microelectron. Reliab..

Smart Power SoC: Technology Challenges and Innovations

Peter Moens, Renaud Gillon, Marnix Tack, 2008 .

IEC vs. HBM: How to optimize on-chip protections to handle both requirements?

Sergey Bychikhin, Dionyz Pogany, Peter Moens, 2009, 2009 31st EOS/ESD Symposium.

Experimental demonstration of a vertical LOCOS Insulated Base Transistor

E. M. Sankara Narayanan, Konstantin Vershinin, Peter Moens, 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

TLP Characterization of large gate width devices

Peter Moens, F. De Pestel, H. Casier, 2007, Microelectron. Reliab..

Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors

Gaudenzio Meneghesso, Peter Moens, Matteo Meneghini, 2015, 2015 IEEE International Reliability Physics Symposium.

Development of 650V Cascode GaN Technology

Peter Moens, Marnix Tack, Woochul Jeon, 2015 .

Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors

Gaudenzio Meneghesso, A. Nardo, Enrico Zanoni, 2018, 2019 IEEE International Reliability Physics Symposium (IRPS).

Using Adaptive Resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors.

Jan Doutreloigne, Peter Moens, Benoit Bakeroot, 2001 .

Next Generation Smart Power Technologies - Challenges and Innovations Enabling Complex SoC Integration

Peter Moens, Renaud Gillon, Marnix Tack, 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

First experimental demonstration of solid state circuit breaker (SSCB) using 650V GaN-based monolithic bidirectional switch

Z. John Shen, Peter Moens, Zhenyu Miao, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

An Industrial 650V GaN DHEMT Cascode Technology

Filip Bauwens, Peter Moens, Marnix Tack, 2014 .

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron

Peter Moens, Matteo Meneghini, Benoit Bakeroot, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Integrated submicron switching transistor breaking the Si limit at 100 V

Filip Bauwens, Peter Moens, M. Tack, 2008 .

ISPSD `07 Best Paper Award; Record-Low On-Resistance for 0.35 μm based Integrated XTREMOS TM Transistors

Filip Bauwens, Peter Moens, Marnix Tack, 2008, ISPSD 2008.

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Self-Heating Driven V>inf /inf

Peter Moens, M. Tack, W. De Ceuninck, 2006, ISPSD 2006.

Next generation of Deep Trench Isolation for Smart Power technologies with 120 V high-voltage devices

Filip Bauwens, P. Gassot, Peter Moens, 2010, Microelectron. Reliab..

Electron Trapping in GaN-on-Si Power HEMTs

Gaudenzio Meneghesso, Michael J. Uren, Peter Moens, 2015, ICNS 2015.

Evidence for source side injection hot carrier effects on lateral DMOS transistors

Geert Van den bosch, Guido Groeseneken, P. Gassot, 2004, Microelectron. Reliab..

Locating hot carrier injection in n-type DeMOS transistors by Charge Pumping and 2D device simulations

Filip Bauwens, Peter Moens, P. Moens, 2004, Microelectron. Reliab..

High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C

Philippe Godignon, Peter Moens, Amador Pérez-Tomás, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Design and characterization of a post-processed copper heat sink for smart power drivers

Peter Moens, D. Wojciechowski, B. Elattari, 2005 .

A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability

Peter Moens, Arno Stockman, P. Moens, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Smart Power Devices Nanotechnology

Gaudenzio Meneghesso, Peter Moens, Mikael Östling, 2017 .

Integration of an SCR in an active clamp

Peter Moens, K. Reynders, 2007, Microelectron. Reliab..

Technology and design of GaN power devices

Z. Li, C. Liu, Peter Moens, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

Thermal resistance assessment in multi-trenched power devices

Filip Bauwens, Peter Moens, B. Desoete, 2008, Microelectron. Reliab..

Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors

Gaudenzio Meneghesso, A. Nardo, Enrico Zanoni, 2019, IRPS.

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions

Peter Moens, Matteo Meneghini, Carlo De Santi, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Temperature-Dependent Dynamic $R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2015, IEEE Transactions on Electron Devices.

On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2015 .

On conduction mechanisms through SiN/AlGaN based gate dielectric and assessment of intrinsic reliability

Peter Moens, Piet Vanmeerbeek, Steven Vandeweghe, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures

Gaudenzio Meneghesso, Antonio Gnudi, Peter Moens, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).