E. Canato

Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors

Gaudenzio Meneghesso, A. Nardo, Enrico Zanoni, 2018, 2019 IEEE International Reliability Physics Symposium (IRPS).

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level

Gaudenzio Meneghesso, Stefaan Decoutere, Enrico Zanoni, 2017, Microelectron. Reliab..

$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate

G. Meneghesso, M. Meneghini, P. Moens, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

GaN HEMTs with p-GaN gate: field- and time-dependent degradation

C. De Santi, G. Meneghesso, M. Meneghini, 2017, OPTO.

Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors

Gaudenzio Meneghesso, A. Nardo, Enrico Zanoni, 2019, IRPS.