N. Goto

2D-device simulation with deep trap model and its application to compound semiconductor device analyses

K. Kunihiro, Yasuo Ohno, H. Nishizawa, 1992 .

High-efficiency, small-chip AlGaAs/GaAs power HBTs for low-voltage digital cellular phones

K. Honjo, N. Hayama, N. Goto, 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

A 1.4-dB-NF variable-gain LNA with continuous control for 2-GHz-band mobile phones using InGaP emitter HBTs

Y. Aoki, T. Niwa, S. Yoshida, 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

Two-dimensional numerical simulation of side-gating effect in GaAs MESFETs

Hitoshi Yano, N. Goto, Y. Ohno, 1990 .

Microwave low-noise AlGaAs/InGaAs HBT's with p/sup +/-regrown base contacts

Y. Amamiya, M. Mamada, H. Shimawaki, 1998, IEEE Electron Device Letters.