Jiangzheng Cai

A PMOS read-port 8T SRAM cell with optimized leakage power and enhanced performance

Yong Hei, Cheng-Ying Chen, Li-Ming Chen, 2017, IEICE Electron. Express.

High noise margin 12T subthreshold SRAM cell with enhanced read speed and eliminated half-selected problem

Yong Hei, Liming Chen, Jia Yuan, 2016, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

A 320 mV, 6 kb subthreshold 10T SRAM employing voltage lowering techniques

Xinchao Shang, Jia Yuan, Liming Chen, 2015 .

A design of subthreshold SRAM cell based on RSCE and RNCE

Yong Hei, Li-Ming Chen, Jia Yuan, 2015, 2015 IEEE 11th International Conference on ASIC (ASICON).

A Low-Voltage SRAM Sense Amplifier With Offset Cancelling Using Digitized Multiple Body Biasing

Yong Hei, Jia Yuan, Jiangzheng Cai, 2015, IEEE Transactions on Circuits and Systems II: Express Briefs.