D.H. Han

The excellent scalability of the RCAT (recess-channel-array-transistor) technology for sub-70nm DRAM feature size and beyond

H.J. Kim, Kinam Kim, H.S. Kim, 2005, IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)..

A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm DRAMs

Y.S. Lee, J.M. Park, Y.S. Hwang, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..