M.Y. Jung

The excellent scalability of the RCAT (recess-channel-array-transistor) technology for sub-70nm DRAM feature size and beyond

H.J. Kim, Kinam Kim, H.S. Kim, 2005, IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)..

S-RCAT (sphere-shaped-recess-channel-array transistor) technology for 70nm DRAM feature size and beyond

H.J. Kim, Kinam Kim, Y.S. Lee, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..