N. M. Johnson

发表

Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates

Christopher L. Chua, Alexander Usikov, Mark Teepe, 2010, OPTO.

Deep - Level Transient Spectroscopy: From Characterization To Electronic Defect Identification

N. M. Johnson, 1985, Photonics West - Lasers and Applications in Science and Engineering.

High-Performance Thin Film Transistors In CO2 Laser Crystallized Silicon On Quartz

W. P. Meuli, N. M. Johnson, A. Chiang, 1983, Photonics West - Lasers and Applications in Science and Engineering.

Kinetics of metastability in doped hydrogenated amorphous silicon

Robert A. Street, Warren B. Jackson, N. M. Johnson, 1994 .

PHASE SEPARATION IN InGaN/GaN MULTIPLE QUANTUM WELLS

David P. Bour, Matthew D. McCluskey, Brent S. Krusor, 1998 .

Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition

Zhe Chuan Feng, Eugene E. Haller, Matthew D. McCluskey, 1998 .

Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers

Michael Kneissl, N. M. Johnson, W. W. Chow, 2007 .

Gallium Nitride Thick Films Grown by Hydride Vapor Phase Epitaxy

Roshan L. Aggarwal, I. Melngailis, Elliott R. Brown, 1996 .

Interdiffusion of In and Ga in InGaN quantum wells

Matthew D. McCluskey, Brent S. Krusor, N. M. Johnson, 1998 .

Spectroscopy of hydrogen-related complexes in GaP:Zn

Eugene E. Haller, Matthew D. McCluskey, N. M. Johnson, 1994 .

Trapping time in processed polycrystalline silicon measured by picosecond time‐resolved reflectivity

Philippe M. Fauchet, W. L. Nighan, I. H. Campbell, 1988 .

InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off

William S. Wong, Michael Kneissl, David P. Bour, 2000 .

Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars

Richard K. Chang, Michael Kneissl, Hakan E. Türeci, 2003 .

Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

Michael Kneissl, Thomas Wunderer, Christopher L. Chua, 2012 .

Energy‐resolved DLTS measurement of interface states in MIS structures

N. M. Johnson, N. Johnson, 1979 .

Local vibrational modes of the Mg–H acceptor complex in GaN

Eugene E. Haller, David P. Bour, Matthew D. McCluskey, 1996 .

Electroabsorption spectroscopy: Direct determination of the strong piezoelectric field in InGaN/GaN heterostructure diodes

Michael Kneissl, Peter Kiesel, N. M. Johnson, 2001 .

Transient capacitance measurements of hole emission from interface states in MOS structures

N. M. Johnson, M. Schulz, N. Johnson, 1977 .

Dry-etching and characterization of mirrors on III-nitride laser diodes from chemically assisted ion beam etching

Daniel Hofstetter, Michael Kneissl, David P. Bour, 1998 .

Generation of P[sub b] Centers by High Electric Fields: Thermochemical Effects

Walter R. Buchwald, N. M. Johnson, N. Johnson, 1989 .

Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs

M. Weyers, Zhihong Yang, M. Kneissl, 2012, IEEE Photonics Technology Letters.

Tunable electroabsorption in gallium arsenide doping superlattices

Connie J. Chang-Hasnain, G. Hasnain, Andrew Dienes, 1987 .

Vertical injection thin-film AlGaN∕AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes

Michael R. Krames, Werner K. Goetz, M. Kneissl, 2006 .

Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films

Warren B. Jackson, N. H. Nickel, N. M. Johnson, 1993 .

Measurement of semiconductor–insulator interface states by constant‐capacitance deep‐level transient spectroscopy

N. M. Johnson, N. Johnson, 1982 .

Doping of AlGaN alloys

Matthew D. McCluskey, Jörg Neugebauer, N. M. Johnson, 1999 .

Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching

Michael Kneissl, David P. Bour, Brent S. Krusor, 1998 .

Metastability of Oxygen Donors in AlGaN

Michael Kneissl, David P. Bour, Matthew D. McCluskey, 1998 .

Self‐limiting oxidation of Si nanowires

Roger Fabian W. Pease, Fernando Ponce, David K. Biegelsen, 1993 .

Negative capacitance in forward biased hydrogenated amorphous silicon p+-i-n+ diodes

N. M. Johnson, N. Johnson, F. Lemmi, 1999 .

Studies of the effect of oxidation time and temperature on the Si‐SiO2 interface using Auger sputter profiling

C. R. Helms, S. A. Schwarz, N. M. Johnson, 1979 .

The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

Frank J. Grunthaner, Michael H. Hecht, P. J. Grunthaner, 1987 .

LARGE BAND GAP BOWING OF INXGA1-XN ALLOYS

Matthew D. McCluskey, N. M. Johnson, L. Romano, 1998 .

Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on silicon

Stephen Aplin Lyon, N. M. Johnson, N. Johnson, 1984 .

Comparison study of photoluminescence from InGaN/GaN multiple quantum wells and InGaN epitaxial layers under large hydrostatic pressure

P. Perlin, Eugene E. Haller, David P. Bour, 1998 .

Current-injection spiral-shaped microcavity disk laser diodes with unidirectional emission

Richard K. Chang, Michael Kneissl, Mark Teepe, 2004 .

Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires

Roger Fabian W. Pease, Fernando Ponce, David K. Biegelsen, 1994 .

Revised role for the Poole--Frenkel effect in deep-level characterization

Walter R. Buchwald, N. M. Johnson, N. Johnson, 1988 .

Density of gap states of silicon grain boundaries determined by optical absorption

Warren B. Jackson, David K. Biegelsen, N. M. Johnson, 1983 .

Deep level defects in n‐type GaN

Isamu Akasaki, Hiroshi Amano, N. M. Johnson, 1994 .

Electric field dependence of hydrogen neutralization of shallow‐acceptor impurities in single‐crystal silicon

N. M. Johnson, N. Johnson, 1985 .

Double heterostructure ultraviolet light emitting diodes with nanometer scale compositionally inhomogeneous active regions

Michael Wraback, Vladimir Dmitriev, Gregory A. Garrett, 2008 .