A. Kinoshita

Ultra Low Voltage Operations in Bulk CMOS Logic Circuits with Dopant Segregated Schottky Source/Drain Transistors

J. Koga, Y. Toyoshima, F. Matsuoka, 2006, 2006 International Electron Devices Meeting.

Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs

J. Koga, S. Takagi, K. Uchida, 2003, International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003..

Fermi-level depinning in metal/Ge Schottky junction and its application to metal source/drain Ge NMOSFET

Y. Nishi, A. Kinoshita, K. Saraswat, 2008, 2008 Symposium on VLSI Technology.

The study of mobility-tin, trade-off in deeply scaled high-k / metal gate devices and scaling design guideline for 22nm-node generation

Y. Toyoshima, N. Kusunoki, S. Kawanaka, 2006, 2009 Symposium on VLSI Technology.

High-performance 50-nm-gate-length Schottky-source/drain MOSFETs with dopant-segregation junctions

J. Koga, K. Uchida, A. Kinoshita, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique

J. Koga, K. Uchida, A. Kinoshita, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Carrier Transport in (110) nMOSFETs: Subband Structures, Non-Parabolicity, Mobility Characteristics, and Uniaxial Stress Engineering

M. Saitoh, K. Uchida, A. Kinoshita, 2006, 2006 International Electron Devices Meeting.