Naoharu Sugiyama

发表

Effect of dislocation density on efficiency curves in InGaN/GaN multiple quantum well light-emitting diodes

Shigeya Kimura, Koichi Tachibana, Hajime Nago, 2012, OPTO.

Strained-Si-on-Insulator (Strained-SOI) MOSFETs-Concept, Structures and Device Characteristics

Shinichi Takagi, Naoharu Sugiyama, Tomohisa Mizuno, 2001 .

Development of UV-C laser diodes on AlN substrate

Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, 2021, OPTO.

Dislocation-free formation of relaxed SiGe-on-insulator layers

Shinichi Takagi, Naoharu Sugiyama, Tsutomu Tezuka, 2002 .

Device structures and carrier transport properties of advanced CMOS using high mobility channels

Shinichi Takagi, Toshinori Numata, Satoshi Sugahara, 2007 .

Extremely low-threshold zinc-diffused mesa buried-hetero multiquantum-well lasers

Hideto Furuyama, Naoharu Sugiyama, Yoshihiro Kokubun, 1987 .

Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility

Shinichi Takagi, Yoshimi Yamashita, Naoharu Sugiyama, 2008 .

Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology

Shinichi Takagi, Naoharu Sugiyama, Tomohisa Mizuno, 2001 .

Novel Fabrication Technique for Relaxed SiGe-on-Insulator Substrates without Thick SiGe Buffer Structures

Shinichi Takagi, Naoharu Sugiyama, Tomohisa Mizuno, 2001 .

Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory

Ken Uchida, Akira Toriumi, Junji Koga, 2000 .

Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate

Koichi Tachibana, Hisashi Yoshida, Shinya Nunoue, 2012 .

Non-volatile Si quantum memory with self-aligned doubly-stacked dots

Ken Uchida, Akira Toriumi, Junji Koga, 2000 .

Dislocation-free relaxed SiGe-on-insulator mesa structures fabricated by high-temperature oxidation

Shinichi Takagi, Naoharu Sugiyama, Tsutomu Tezuka, 2003 .

Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

Shinichi Takagi, Naoharu Sugiyama, Tsutomu Tezuka, 2001 .

{110}-facets formation by hydrogen thermal etching on sidewalls of Si and strained-Si fin structures

Shinichi Takagi, Naoharu Sugiyama, Norio Hirashita, 2008 .

Impact of Gradual Source/Drain Impurity Profiles on Performance of Germanium Channel Double-Gated pMISFETs

Shinichi Takagi, Yoshimi Yamashita, Naoharu Sugiyama, 2007 .

Tenth micron p-MOSFET's with ultra-thin epitaxial channel layer grown by ultra-high-vacuum CVD

Hiroshi Iwai, C. Fiegna, Y. Akasaka, 1993, Proceedings of IEEE International Electron Devices Meeting.

Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies

Shinichi Takagi, Toshinori Numata, Tatsuro Maeda, 2006 .

Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation

Shinichi Takagi, Naoharu Sugiyama, Tomohisa Mizuno, 2004 .

Ultrathin body SiGe-on-insulator pMOSFETs with high-mobility SiGe surface channels

Shinichi Takagi, Naoharu Sugiyama, Tomohisa Mizuno, 2003 .

Novel SOI p-channel MOSFETs with higher strain in si channel using double SiGe heterostructures

Shinichi Takagi, T. Tezuka, Naoharu Sugiyama, 2002 .

High-performance (110)-surface strained-SOI MOSFETs

Shinichi Takagi, Naoharu Sugiyama, Tomohisa Mizuno, 2005 .

Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots

Ken Uchida, Akira Toriumi, Junji Koga, 2000 .

A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

Shinichi Takagi, Masamichi Suzuki, Naoharu Sugiyama, 2000 .

Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

Shinichi Takagi, Naoharu Sugiyama, Tsutomu Tezuka, 2003 .

The influence of oxygen at epitaxial Si/Si substrate interface for 0.1 /spl mu/m epitaxial Si channel N-MOSFETs grown by UHV-CVD

Hiroshi Iwai, Tatsuya Ohguro, Hisayo Sasaki Momose, 1995, 1995 Symposium on VLSI Technology. Digest of Technical Papers.

Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating

Hiroshi Iwai, H. Kimijima, Tatsuya Ohguro, 1998 .