N. Okabe

High performance CMOS surrounding gate transistor (SGT) for ultra high density LSIs

Fumio Horiguchi, Katsuhiko Hieda, Akihiro Nitayama, 1988, Technical Digest., International Electron Devices Meeting.

Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's

Fumio Horiguchi, Katsuhiko Hieda, Akihiro Nitayama, 1991 .

High speed and compact CMOS circuits with multi-pillar surrounding gate transistors

Fumio Horiguchi, Katsuhiko Hieda, Akihiro Nitayama, 1989 .

Multi-pillar surrounding gate transistor (M-SGT) for compact and high-speed circuits

Fumio Horiguchi, Katsuhiko Hieda, Akihiro Nitayama, 1991 .

A semiconductor memory device and methods for their preparation

Akihiro Nitayama, Kazumasa Sunouchi, Hiroshi Takato, 1990 .

Process integration for 64 M DRAM using an asymmetrical stacked trench capacitor (AST) cell

Fumio Horiguchi, Katsuhiko Hieda, Akihiro Nitayama, 1990, International Technical Digest on Electron Devices.