G. L. Patton

On the leverage of high-f/sub T/ transistors for advanced high-speed bipolar circuits

Ching-Te Chuang, Kenneth Chin, Emmanuel F. Crabbe, 1992 .

Epitaxial-base double-poly self-aligned bipolar transistors

John D. Cressler, Tak H. Ning, Bernard S. Meyerson, 1990, International Technical Digest on Electron Devices.

113-GHz f/sub T/ graded-base SiGe HBT's

Bernard S. Meyerson, David L. Harame, A. C. Megdanis, 1993 .

Sub-30ps ECL circuits using high-f/sub T/ Si and SiGe epitaxial base SEEW transistors

Keith A. Jenkins, John D. Cressler, Bernard S. Meyerson, 1990, International Technical Digest on Electron Devices.

Heterojunction bipolar transistors using Si-Ge alloys

Bernard S. Meyerson, David L. Harame, Subramanian S. Iyer, 1989 .

Submicrometer Si and Si-Ge epitaxial-base double-poly self-aligned bipolar transistors

Ching-Te Chuang, John D. Cressler, Tak H. Ning, 1991 .

113-GHz fT graded-base SiGe HBTs

Bernard S. Meyerson, David L. Harame, A. C. Megdanis, 1993, 51st Annual Device Research Conference.