C.W. Teng

A highly reliable 0.3 μm n-channel MOSFET using poly spacers

I.C. Chen, J.P. Lin, C.W. Teng, 1990, Digest of Technical Papers.1990 Symposium on VLSI Technology.

Interface trap-enhanced gate-induced leakage current in MOSFET

C.W. Teng, D.J. Coleman, I. Chen, 1989, IEEE Electron Device Letters.

Scalability of a trench capacitor cell for 64 Mbit DRAM

C.W. Teng, D.J. Coleman, I. Chen, 1989, International Technical Digest on Electron Devices Meeting.

Gate current injection initiated by electron band-to-band tunneling in MOS devices

C.W. Teng, D.J. Coleman, I.-C. Chen, 1989, IEEE Electron Device Letters.