Alexandre Acovic

CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance applications

Tak H. Ning, Robert H. Dennard, James D. Warnock, 1995, IBM Journal of Research and Development.

Identification of amorphous silicon residues in a low-power CMOS technology

Peter Jacob, Markus Kohli, Pa Buffat, 1999, Advanced Lithography.

Two-channel EEPROM grave memory cell on SOI and methods of making the same

Alexandre Acovic, Ben Song Wu, 1995 .

Variability of low frequency noise in moderately-sized MOSFETs — A model for the area- and gate voltage-dependence

Predrag Habas, Matthias Bucher, Nikolaos Mavredakis, 2015, 2015 International Conference on Noise and Fluctuations (ICNF).

Physical mechanism of interpoly capacitance reduction in high-voltage stress

Predrag Habas, Alexandre Acovic, P. Habaš, 2012 .