Nobuhiko Sawaki

发表

A local vibration mode in a carbon doped (1-101)AlGaN

Hiroshi Amano, Yoshio Honda, Nobuhiko Sawaki, 2012, OPTO.

Selective MOVPE of III-nitrides and device fabrication on an Si substrate

Nobuhiko Sawaki, 2009, Photonics and Optoelectronics Meetings.

High efficiency InGaN solar cell with a graded p-InGaN top layer

Nobuhiko Sawaki, Tomoki Fujisawa, 2012, OPTO.

Selective growth and impurity incorporation in semipolar GaN grown on Si substrate

Yoshio Honda, M. Yamaguchi, Toshiki Hikosaka, 2010, OPTO.

Defects generation and annihilation in GaN grown on patterned silicon substrate

Hiroshi Amano, Yoshio Honda, Nobuhiko Sawaki, 2013, Photonics West - Optoelectronic Materials and Devices.

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate

Hao-Chung Kuo, Yoshio Honda, Tien-Chang Lu, 2011, OPTO.

Growth of semi‐polar (11‐22)GaN on a (113)Si substrate by selective MOVPE

Yoshio Honda, Masahito Yamaguchi, Toshiki Hikosaka, 2008 .

Surface plasmon-enhanced photoluminescence from a single quantum well

Gottfried Strasser, T. Maier, N. E. Hecker, 1999 .

Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN

Juergen Christen, Christian Thomsen, Frank Bertram, 1999 .

Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates

Yoshio Honda, Min Yang, Masahito Yamaguchi, 2009 .

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Kazumasa Hiramatsu, 1989 .

Defect structure in selective area growth GaN pyramid on (111)Si substrate

Kazumasa Hiramatsu, Nobuhiko Sawaki, Michio Hibino, 2000 .

Electron beam effects on blue luminescence of zinc-doped GaN

Takahiro Kozawa, Yoshikazu Ishii, Isamu Akasaki, 1988 .

Growth of ( 1 1 0 1 ) GaN on a 7-degree off-oriented (0 0 1)Si substrate by selective MOVPE

Yoshio Honda, Norifumi Kameshiro, Masahito Yamaguchi, 2002 .

Growth and properties of semi-polar GaN on a patterned silicon substrate

Yoshio Honda, Masahito Yamaguchi, Toshiki Hikosaka, 2009 .

Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer

Tetsu Kachi, Kenji Itoh, Nobuhiko Sawaki, 2008 .

Energy band‐gap bowing parameter in an AlxGa1−x N alloy

Isamu Akasaki, Yasuo Koide, Nobuhiko Sawaki, 1987 .

Theory of Plasma Spreading Velocity in a Thyristor

Nobuhiko Sawaki, Noriaki K. Sato, Tetsuya Arizumi, 1975 .

Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy

Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki, 2002 .

Enhanced light emission from a single quantum well located near a metal coated surface

N. E. Hecker, Nobuhiko Sawaki, N. Sawaki, 1998 .

MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer

Masaya Shimizu, Kazumasa Hiramatsu, Nobuhiko Sawaki, 1997 .

Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

Kazumasa Hiramatsu, Nobuhiko Sawaki, Qin-Sheng Zhu, 2000 .

Epitaxial lateral overgrowth of GaN structures : spatially resolved characterization by cathodoluminescence microscopy and micro-Raman spectroscopy

Andreas Hoffmann, Juergen Christen, Frank Bertram, 1999 .

Optical and Electrical Properties of (1-101)GaN Grown on a 7°Off-Axis (001)Si Substrate

Yoshio Honda, Tetsuo Narita, Masahito Yamaguchi, 2004 .

Analysis of deep levels in n‐type GaN by transient capacitance methods

Theeradetch Detchprohm, Peter Hacke, Kazuyuki Tadatomo, 1994 .

Deep levels in the upper band-gap region of lightly Mg-doped GaN

Theeradetch Detchprohm, Peter Hacke, Kazumasa Hiramatsu, 1996 .

Growth of non-polar (1 1 2¯ 0)GaN on a patterned (1 1 0)Si substrate by selective MOVPE

Yoshio Honda, Toshiki Hikosaka, Nobuhiko Sawaki, 2008 .

Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy

Theeradetch Detchprohm, Peter Hacke, Kazumasa Hiramatsu, 1993 .

OPTICAL AND CRYSTALLINE PROPERTIES OF EPITAXIAL-LATERAL-OVERGROWN-GAN USING TUNGSTEN MASK BY HYDRIDE VAPOR PHASE EPITAXY

Hiroki Sone, Hideto Miyake, Masahito Yamaguchi, 1999 .

Mg segregation in a (1 1¯ 0 1) GaN grown on a 7° off-axis (0 0 1) Si substrate by MOVPE

Tetsu Kachi, Toshiki Hikosaka, Nobuhiko Sawaki, 2009 .

Reduction of dislocations in a (1 1 2¯ 2)GaN grown by selective MOVPE on (1 1 3)Si

Yoshio Honda, Nobuhiko Sawaki, Tomoyuki Tanikawa, 2009 .

Optical properties of (1 1¯ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates

Hao-Chung Kuo, Yoshio Honda, Tien-Chang Lu, 2011 .

UV Photoemission Study of AlGaN Grown by Metalorganic Vapor Phase Epitaxy

Takahiro Kozawa, Yasunori Taga, Tomohiko Mori, 2000 .

Fabrication and properties of semi‐polar (1‐101) and (11‐22) InGaN/GaN light emitting diodes on patterned Si substrates

Yoshio Honda, Masahito Yamaguchi, Toshiki Hikosaka, 2008 .