Yasushi Nanishi

发表

Investigation of cross-sectional potential distribution in GaN-based field effect transistors by Kelvin probe force microscopy

Tsutomu Araki, A. Suzuki, Masamitsu Kaneko, 2008, SPIE OPTO.

Thermal analysis of AlGaN/GaN HFETs using electro-thermal simulation and micro-Raman spectroscopy

Tsutomu Araki, Kaoru Inoue, A. Suzuki, 2007, SPIE OPTO.

Growth and fabrication of InN-based III-nitride device structure using droplet elimination process by radical beam irradiation

Tsutomu Araki, Tomohiro Yamaguchi, Yasushi Nanishi, 2011, OPTO.

The influence of alloy disorder and hydrostatic pressure on electrical and optical properties of In-rich InGaN compounds

T. Suski, William J. Schaff, Masahito Kurouchi, 2007, SPIE OPTO.

High-Sensitivity Ozone Sensing Using 280 nm Deep Ultraviolet Light-Emitting Diode for Detection of Natural Hazard Ozone

Yumi Ahiko, Hirotaka Nakamura, Masahito Kurouchi, 2012 .

GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility

Hirotaka Otake, Hiroaki Ohta, Hidemi Takasu, 2007 .

Correlation between the leakage current and the thickness of GaN‐layer of AlGaN/GaN‐HFET

Tomoyuki Yamada, Tadayoshi Tsuchiya, Akihiro Hinoki, 2007 .

Unusual properties of the fundamental band gap of InN

Eugene E. Haller, Joel W. Ager, Yoshiki Saito, 2002 .

Room-temperature observation of ferromagnetism in diluted magnetic semiconductor GaGdN grown by RF-molecular beam epitaxy

Hajime Asahi, Yasushi Nanishi, N. Teraguchi, 2002 .

Investigation of leakage current paths in n-GaN by conductive atomic force microscopy

Euijoon Yoon, Yongjo Park, Bumho Kim, 2014 .

Si Surface Cleaning and Epitaxial Growth of GaAs on Si by Electron Cyclotron Resonance Plasma‐Excited Molecular‐Beam‐Epitaxy at Low Temperatures

Naoto Kondo, Tomohiro Shibata, Yasushi Nanishi, 1989 .

Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor

Shintaro Miyazawa, Yasunobu Ishii, Yasushi Nanishi, 1983 .

Marked enhancement of 320–360 nm ultraviolet emission in quaternary InxAlyGa1−x−yN with In-segregation effect

Atsuhiro Kinoshita, Akira Hirata, Yoshinobu Aoyagi, 2002 .

Optical Properties of InxGa1—xN with Entire Alloy Composition on InN Buffer Layer Grown by RF‐MBE

Yoshiki Saito, Tomohiro Yamaguchi, Yasushi Nanishi, 2002 .

Growth and properties of In‐rich InGaN films grown on (0001) sapphire by RF‐MBE

Masahito Kurouchi, Tomohiro Yamaguchi, Yasushi Nanishi, 2004 .

Front Matter: Volume 8625

Hadis Morkoç, Joachim Piprek, Euijoon Yoon, 2013 .

Structure Analysis of InN Film Using Extended X-Ray Absorption Fine Structure Method

Toshimasa Kobayashi, Yoshihiro Kudo, Yoshiki Saito, 2002 .

Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

P. Schley, Frank Fuchs, Klaus Lischka, 2007 .

RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

Yoshiki Saito, Tomohiro Yamaguchi, Yasushi Nanishi, 2003 .