Tadayoshi Deguchi

Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure

Takashi Egawa, Atsushi Kamada, Manabu Arai, 2012, IEICE Trans. Electron..

Static and dynamic performance evaluation of > 13 kV SiC p-channel IGBTs at high temperatures

Atsushi Tanaka, Toshihiko Hayashi, Katsunori Asano, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

A CONSIDERATION ON REDUCING ROAD TRAFFIC NOISE NEAR TRUNK ROAD BY TAKING COUNTERMEASURES AGAINST NOISE SOURCE

Yoshinori Watanabe, Tadayoshi Deguchi, 1996 .

A Consideration on Reducing Road Traffic Noise by Widespreading Low-noise Vehicles Like Electric Ones

Yoshinori Watanabe, Tadayoshi Deguchi, 1996 .

Influence of crystalline quality of low-temperature GaN cap layer on current collapse in AlGaN∕GaN heterostructure field-effect transistors

Atsushi Nakagawa, Tadayoshi Deguchi, T. Egawa, 2008 .

Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs

Kenji Fukuda, Hajime Okumura, Manabu Takei, 2014 .

Ultrahigh voltage SiC bipolar devices

Kenji Fukuda, Toshihiko Hayashi, Tsunenobu Kimoto, 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Toshihiko Hayashi, Tsunenobu Kimoto, 2015, IEEE Transactions on Electron Devices.