Radek Roucka

发表

Germanium p-i-n photodiode on silicon for integrated photonic applications

Jay Mathews, John Tolle, John Kouvetakis, 2010, OPTO.

Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon

John Tolle, John Kouvetakis, Jose Menendez, 2006 .

Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

John Tolle, John Kouvetakis, Chi Xu, 2010 .

Versatile buffer layer architectures based on Ge1−xSnx alloys

John Tolle, Stefan Zollner, John Kouvetakis, 2005 .

Near IR Photodiodes with Tunable Absorption Edge Based on Ge1-y Sny Alloys Integrated on Silicon

John Tolle, John Kouvetakis, Jose Menendez, 2010 .

Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

Shui-Qing Yu, Junqi Xie, John Kouvetakis, 2009 .

LASERS, OPTICS, AND OPTOELECTRONICS 2865 Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities

Costas Fotakis, Eric Moreau, C. Kalpouzos, 2001 .

Ge1−ySny photoconductor structures at 1.55μm: From advanced materials to prototype devices

John Tolle, Shui-Qing Yu, Junqi Xie, 2008 .

Raman scattering in Ge1−ySny alloys

John Tolle, John Kouvetakis, Christian D. Poweleit, 2007 .