S. E. Jamali Mahabadi

4H-SiC SOI-MESFET with a step in buried oxide for improving electrical performance

Ali A. Orouji, Hamid Amini Moghadam, S. E. Jamali Mahabadi, 2011, 2011 IEEE International Conference on Computer Science and Automation Engineering.

Employing reduced surface field technique by a P‐type region in 4H‐SiC metal semiconductor field effect transistors for increasing breakdown voltage

S. E. Jamali Mahabadi, H. A. Moghadam, A. A. Orouji, 2013 .

A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

S. E. Jamali Mahabadi, H. A. Moghadam, A. Orouji, 2011 .

A novel step buried oxide Partial SOI LDMOSFET with Triple Drift layer

S. E. Jamali Mahabadi, H. A. Moghadam, Saba Rajabi, 2011, 2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies.

Obtaining more energetic modelocked pulses from a SESAM-based fiber laser.

S. E. Jamali Mahabadi, C. Menyuk, I. Coddington, 2020, Optics express.