Lv Yuanjie

60 nm T-shaped-gate InAlN/GaN HFETs with fT & f(max) of 170 & 210 GHz

Lv Yuanjie, Feng Zhihong, Zhang Zhirong, 2016 .

90-nm-gated AlGaN/GaN HEMT with fT&fmax of 132GHz&205GHz

Lv Yuanjie, Song Xubo, Yin Jiayun, 2014, 2014 IEEE International Conference on Electron Devices and Solid-State Circuits.

fT /f(max) >150 /210 GHz AlGaN/GaN HFETs with regrown n+-GaN Ohmic contacts by MOCVD

Lv Yuanjie, Feng Zhihong, Zhang Zhirong, 2016 .

Design of power amplifier MMICs based on GaN HEMTs at 110GHz

Yu Weihua, Lv Yuanjie, Feng Zhihong, 2015, 2015 Asia-Pacific Microwave Conference (APMC).

Equivalent circuit model of millimeter-wave AlGaN/GaN HEMTs

Yu Weihua, Lv Xin, Lv Yuanjie, 2014 .