Jun-Hyun Park

An adaptive quantization using modified QP in H.264

Jong-Ki Han, Jun-Hyun Park, Byung Choel Song, 2005, 2005 Digest of Technical Papers. International Conference on Consumer Electronics, 2005. ICCE..

Dynamic bias temperature instability-like behaviors under Fowler–Nordheim program/erase stress in nanoscale silicon-oxide-nitride-oxide-silicon memories

Byung-Gook Park, Dong Myong Kim, Jong Duk Lee, 2008 .

Empirical Modeling and Extraction of Parasitic Resistance in Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors

Dong Myong Kim, Dae Hwan Kim, Jun-Hyun Park, 2011, IEEE Transactions on Electron Devices.

Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors

Dong Myong Kim, Dae Hwan Kim, Chang Jung Kim, 2010 .

Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

Dong Myong Kim, Changjung Kim, Young-soo Park, 2008 .

Extraction of Density of States in Amorphous GaInZnO Thin-Film Transistors by Combining an Optical Charge Pumping and Capacitance–Voltage Characteristics

Dong Myong Kim, Dae Hwan Kim, Chang Jung Kim, 2008, IEEE Electron Device Letters.

Density of States-Based DC $I$– $V$ Model of Amorphous Gallium–Indium–Zinc-Oxide Thin-Film Transistors

Dong Myong Kim, Dae Hwan Kim, Chang Jung Kim, 2009, IEEE Electron Device Letters.

Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics

Dong Myong Kim, Sungwook Park, Dae Hwan Kim, 2010, IEEE Electron Device Letters.

Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)

U-In Chung, Dong Myong Kim, Dae Hwan Kim, 2010, IEEE Transactions on Electron Devices.