Chih-Hang Tung

发表

Application of excimer laser annealing in the formation of ultrashallow p+/n junctions

Andrew T. S. Wee, Yongfeng Lu, Alex See, 2000, Other Conferences.

The radial distribution of defects in a percolation path

Kin Leong Pey, Chih-Hang Tung, K. Pey, 2008 .

Hot Carrier Reliability of Strained N-Mosfet with Lattice Mismatched Source/Drain Stressors

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors

Kin Leong Pey, Chih-Hang Tung, W. H. Lin, 2003 .

Physical analysis of Ti-migration in 33 /spl Aring/ gate oxide breakdown

Kin Leong Pey, Chih-Hang Tung, W. H. Lin, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

Electromigration in damascene copper interconnects of line width down to 100 nm

Cher Ming Tan, Arijit Roy, Chih-Hang Tung, 2006 .

N-Channel (110)-Sidewall Strained FinFETs With Silicon–Carbon Source and Drain Stressors and Tensile Capping Layer

Yee-Chia Yeo, Tsung-Yang Liow, N. Balasubramanian, 2007, IEEE Electron Device Letters.

Strained Thin-Body p-MOSFET With Condensed Silicon-Germanium Source/Drain for Enhanced Drive Current Performance

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2007, IEEE Electron Device Letters.

Equivalent Circuit Model for the Gate Leakage Current in Broken Down $\hbox{HfO}_{2}/\hbox{TaN/TiN}$ Gate Stacks

Chih-Hang Tung, E. Miranda, E. Miranda, 2008, IEEE Electron Device Letters.

Carrier Transport Characteristics of Sub-30 nm Strained N-Channel FinFETs Featuring Silicon-Carbon Source/Drain Regions and Methods for Further Performance Enhancement

Yee-Chia Yeo, Tsung-Yang Liow, N. Balasubramanian, 2006, 2006 International Electron Devices Meeting.

Strained ${\rm n}$-MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance

Kah-Wee Ang, Yee-Chia Yeo, N. Balasubramanian, 2008, IEEE Transactions on Electron Devices.

Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Breakdowns in high-k gate stacks of nano-scale CMOS devices

Kin Leong Pey, Diing Shenp Ang, Chih-Hang Tung, 2005 .

Strained p-Channel FinFETs With Extended $\Pi$ -Shaped Silicon–Germanium Source and Drain Stressors

Yee-Chia Yeo, Tsung-Yang Liow, N. Balasubramanian, 2007, IEEE Electron Device Letters.

Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon–Carbon Source/Drain and Tensile-Stress Liner

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2007, IEEE Electron Device Letters.

Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2005 .

Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

Dim-Lee Kwong, N. Balasubramanian, Chih-Hang Tung, 2007 .

A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET

Ming Zhu, Yee-Chia Yeo, Tsung-Yang Liow, 2008, IEEE Electron Device Letters.

In Situ Surface Passivation and CMOS-Compatible Palladium–Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs

Ming Zhu, Yee-Chia Yeo, Chih-Hang Tung, 2008, IEEE Electron Device Letters.

The physical origin of random telegraph noise after dielectric breakdown

Kin Leong Pey, Chih-Hang Tung, Xiang Li, 2009 .

Electromigration in copper damascene interconnects : reservoir effects and failure analysis

Ahila Krishnamoorthy, Chih-Hang Tung, A. V. Vairagar, 2005 .

A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel GaAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack

Guo-Qiang Lo, Ming Zhu, Luping Shi, 2008, 2008 IEEE International Electron Devices Meeting.

Strained N-Channel FinFETs with 25 nm Gate Length and Silicon-Carbon Source/Drain Regions for Performance Enhancement

Yee-Chia Yeo, Tsung-Yang Liow, N. Balasubramanian, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Drive-Current Enhancement in FinFETs Using Gate-Induced Stress

Yee-Chia Yeo, Tsung-Yang Liow, Chih-Hang Tung, 2006, IEEE Electron Device Letters.

A New Liner Stressor with Very High Intrinsic Stress (≫ 6 GPa) and Low Permittivity Comprising Diamond-Like Carbon (DLC) for Strained P-Channel Transistors

Ming Zhu, Tsung-Yang Liow, N. Balasubramanian, 2007, 2007 IEEE International Electron Devices Meeting.

Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs

Chih-Hang Tung, W. H. Lin, M. K. Radhakrishnan, 2002 .