R. Mahnkopf

An SOI-based high performance self-aligned bipolar technology featuring 20 ps gate-delay and a 8.6 fj power-delay product.

A. Felder, E. Bertagnolli, H. Klase, 1993, Symposium 1993 on VLSI Technology.

A modular 0.13 /spl mu/m bulk CMOS technology for high performance and low power applications

R. Mahnkopf, S. Biesemans, L. K. Han, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

A high performance BiCMOS process featuring 40 GHz/21 ps

A. Felder, J. Popp, R. Mahnkopf, 1992, 1992 International Technical Digest on Electron Devices Meeting.

B6HF: A 0.8 micron 25GHz/25ps bipolar technology for "Mobile radio" and "Ultra fast data link" IC-products

R. Mahnkopf, M. Kerber, P. Sehrig, 1993, 1993 Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

The impact of intra-die device parameter variations on path delays and on the design for yield of low voltage digital circuits

Doris Schmitt-Landsiedel, R. Mahnkopf, Jörg Berthold, 1996, ISLPED '96.

CMOS with active well bias for low-power and RF/analog applications

R. Mahnkopf, R. Dennard, S. Biesemans, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

Silicon bipolar technology and circuits for optical communications at data rates above 10 GBit/s

Emmerich Bertagnolli, J. Popp, J. Hauenschild, 1993 .

The impact of intra-die device parameter variations on path delays and on the design for yield of low voltage digital circuits

D. Schmitt-Landsiedel, R. Mahnkopf, J. Berthold, 1996, Proceedings of 1996 International Symposium on Low Power Electronics and Design.

Narrow BF/sub 2/ implanted bases for 35 GHz/24 ps high-speed Si bipolar technology

R. Mahnkopf, R. Kopl, Helmut Dr. Klose, 1991, International Electron Devices Meeting 1991 [Technical Digest].