M. Siekacz

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

I. Grzegory, S. Porowski, P. Prystawko, 2006, SPIE OPTO.

Contactless electroreflectance of GaInN/AlInN multi quantum wells: The issue of broadening of optical transitions

R. Kudrawiec, J. Misiewicz, M. Motyka, 2009, Microelectron. J..

Tunnel junctions for two-color nitride light emitting diodes and laser diodes grown by plasma assisted molecular beam epitaxy

C. Skierbiszewski, K. Nowakowski-Szkudlarek, M. Siekacz, 2018, 2018 76th Device Research Conference (DRC).

Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wells

R. Kudrawiec, J. Misiewicz, M. Gladysiewicz, 2009, Microelectron. J..

Tunnel junctions for vertically integrated multiple nitrides laser diodes

K. Nowakowski-Szkudlarek, M. Siekacz, H. Turski, 2019, 2019 Device Research Conference (DRC).

Contactless electroreflectance of InGaN layers with indium content <=36%: The surface band bending, band gap bowing, and Stokes shift issues

J. Misiewicz, Robert Kudrawiec, M. Siekacz, 2009 .