L. Doyennette

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

I. Grzegory, S. Porowski, P. Prystawko, 2006, SPIE OPTO.

MBE growth of nitride-based photovoltaic intersubband detectors

Esther Baumann, Daniel Hofstetter, Francois H. Julien, 2006 .

GaN-based quantum dot infrared photodetector operating at 1 . 38 l

R. Colombelli, E. Monroy, M. Tchernycheva, 2000 .

GaN-based quantum dot infrared photodetector operating at 1.38 /spl mu/m

Raffaele Colombelli, Anatole Lupu, Maria Tchernycheva, 2005 .