M. Kryśko

发表

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

I. Grzegory, S. Porowski, P. Prystawko, 2006, SPIE OPTO.

Secrets of GaN substrates properties for high luminousity of InGaN quantum wells

R. Czernecki, P. Prystawko, M. Leszczynski, 2008, SPIE OPTO.

Growth of bulk GaN by HVPE on pressure grown seeds

I. Grzegory, S. Porowski, G. Nowak, 2006, SPIE OPTO.

Growth of InGaN and InGaN/InGaN Quantum Wells by Plasma Assisted Molecular Beam Epitaxy.

Z. R. Wasilewski, Marcin Siekacz, Izabella Grzegory, 2008 .

Doping-Induced Contrast in the Refractive Index for GaInN/GaN Structures at Telecommunication Wavelengths

Witold Rzodkiewicz, Jan Misiewicz, Robert Kudrawiec, 2009 .

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Z. R. Wasilewski, Piotr Perlin, Henryk Turski, 2011 .

Contactless electroreflectance of InGaN layers with indium content <=36%: The surface band bending, band gap bowing, and Stokes shift issues

J. Misiewicz, Robert Kudrawiec, M. Siekacz, 2009 .

Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates

Piotr Perlin, G. Staszczak, Robert Czernecki, 2010 .

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

Francois H. Julien, Maria Tchernycheva, Marcin Siekacz, 2006 .

Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm

Marcin Siekacz, Izabella Grzegory, Pawel Prystawko, 2006 .

Nitride‐based quantum structures and devices on modified GaN substrates

Grzegorz Nowak, Piotr Perlin, Grzegorz Targowski, 2009 .