Mikhail Gaevski

发表

(Invited) Power Loss Reduction in Perforated-Channel HFET Switches

Michael S. Shur, Grigory Simin, Remis Gaska, 2015 .

Novel AlInN/GaN integrated circuits operating up to 500 °C

Michael S. Shur, Jie Deng, Rakesh K. Jain, 2015 .

Optically Pumped Lasing at 353 nm Using Non-polar a-plane AlGaN Multiple Quantum Wells over r-plane Sapphire

M. Asif Khan, Vinod Adivarahan, Mikhail Gaevski, 2004 .

Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

Asif Khan, Fernando Ponce, Vinod Adivarahan, 2006 .

Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

Grigory Simin, Bruce H. T. Chai, C. Q. Chen, 2002 .

Lateral Epitaxial Overgrowth of Fully Coalesced A-Plane GaN on R-Plane Sapphire

Zheng Gong, Vinod Adivarahan, Mikhail Gaevski, 2003 .

Optical polarization control of photo-pumped stimulated emissions at 238 nm from AlGaN multiple-quantum-well laser structures on AlN substrates

Michael S. Shur, Rakesh K. Jain, Sergey L. Rumyantsev, 2017 .

Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

Martin Kuball, M. Asif Khan, Andrei Sarua, 2002 .

Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Hong Wang, Grigory Simin, C. Q. Chen, 2002 .

Room-Temperature Stimulated Emission from AlN at 214 nm

Asif Khan, Vinod Adivarahan, Mikhail Gaevski, 2006 .

500 °C operation of AlGaN/GaN and AlInN/GaN Integrated Circuits

Grigory Simin, Remis Gaska, J. Deng, 2014 .

Anisotropic structural characteristics of (112̄0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (101̄2) sapphire

Zheng Gong, M. Asif Khan, Mikhail Gaevski, 2004 .

III-nitride microwave control devices and ICs

Michael S. Shur, Grigory Simin, Remigijus Gaska, 2013 .

Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates

Asif Khan, Thomas M. Katona, Vinod Adivarahan, 2007 .

High DC power 325 nm emission deep UV LEDs over sapphire [AlGaN]

M. Asif Khan, Max Shatalov, Vinod Adivarahan, 2002 .

Optical power degradation mechanisms in AlGaN-based 280nm deep ultraviolet light-emitting diodes on sapphire

Zheng Gong, M. Asif Khan, Max Shatalov, 2006 .

AlGaN layers grown on GaN using strain-relief interlayers

Hong Wang, C. Q. Chen, M. Asif Khan, 2002 .