Eaglesham

发表

Discussion on "Survey of modern engineering materials and machinability" at the Glasgow Section of the Institution

Wright, Platt, Kirkwood, .

Discussion on "Inspection as an aid to production" at the Glasgow Section of the Institution

E. W. Hancock, Muirhead, McFarlane, .

Limiting thickness hepi for epitaxial growth and room-temperature Si growth on Si(100).

Eaglesham, Cerullo, Gossmann, 1990, Physical review letters.

Structural relaxation and defect annihilation in pure amorphous silicon.

Jacobson, Eaglesham, Fuoss, 1991, Physical review. B, Condensed matter.

Dislocation-free Stranski-Krastanow growth of Ge on Si(100).

Eaglesham, Cerullo, M. Cerullo, 1990, Physical review letters.

Growth morphology and the equilibrium shape: The role of "surfactants" in Ge/Si island formation.

Jacobson, Eaglesham, Unterwald, 1993, Physical review letters.

Influence of surface reconstruction on the orientation of homoepitaxial silicon films.

Eaglesham, Headrick, Feldman, 1990, Physical review letters.

Equilibrium shape of Si.

Jacobson, White, Eaglesham, 1993, Physical review letters.

New source of dislocations in GexSi1-x/Si(100) strained epitaxial layers.

Humphreys, Maher, Eaglesham, 1989, Physical review letters.