James T. Teherani

Reliable High-Quality Metal-Embedded h-BN Contacts to p-type WSe2

Younghun Jung, Min Sup Choi, Abhinandan Borah, 2018, 2018 76th Device Research Conference (DRC).

Atomic Layer Etching (ALE) of WSe2 Yielding High Mobility p-FETs

Younghun Jung, Min Sup Choi, Abhinandan Borah, 2019, 2019 Device Research Conference (DRC).

Band-to-band tunneling in silicon diodes and tunnel transistors

James T. Teherani, 2010 .

Ultra-Thin, High Quality HfO2 on Strained-Ge MOS Capacitors with Low Leakage Current

Dimitri A. Antoniadis, Judy L. Hoyt, James T. Teherani, 2014 .

Engineering the Electron–Hole Bilayer Tunneling Field-Effect Transistor

Eli Yablonovitch, Dimitri A. Antoniadis, Judy L. Hoyt, 2014, IEEE Transactions on Electron Devices.

Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-к/metal-gate: Effects of hydrogen thermal annealing and nanowire shape

Judy L. Hoyt, James T. Teherani, Pouya Hashemi, 2010, 2010 International Electron Devices Meeting.

Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates

Dimitri A. Antoniadis, Judy L. Hoyt, Winston Chern, 2012 .