J. Sigg

A physics-based GTO model for circuit simulation

C. L. Ma, P. O. Lauritzen, J. Sigg, 1995, Proceedings of PESC '95 - Power Electronics Specialist Conference.

Parameter extraction methodology and validation for an electro-thermal physics-based NPT IGBT model

R. Kraus, J. Sigg, P. Turkes, 1997, IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting.

Numerical Analysis of Distributed Inductive Parasitics in High Power Bus Bars

G. Wachutka, E. Falck, J. Sigg, 1999 .

Electro-thermal simulation of power electronic systems

J. Sigg, P. Türkes, 1998 .

A systematic approach to modeling of power semiconductor devices based on charge control principles

I. Budihardjo, C. L. Ma, P. O. Lauritzen, 1994, Proceedings of 1994 Power Electronics Specialist Conference - PESC'94.

Physics-based models of power semiconductor devices for the circuit simulator SPICE

R. Kraus, J. Sigg, P. Turkes, 1998, PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference (Cat. No.98CH36196).

Modeling of power diodes with the lumped-charge modeling technique

P. O. Lauritzen, J. Sigg, C. L. Ma, 1997 .

ANALYTICAL MODEL FOR DYNAMIC AVALANCHE BREAKDOWN IN POWER DEVICES

J. Sigg, L. G ohler, .

Continuous Field Analysis of Distributed Parasitic Effects Caused by Interconnects in High Power Semiconductor Modules

G. Wachutka, E. Falck, J. Sigg, 1998 .

Series connection of high voltage IGBT modules

M. Fasching, J. Sigg, M. Bruckmann, 1998, Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242).

Degradation modeling of semiconductor devices and electrical circuits

R. Kraus, L. Gohler, J. Sigg, 1998, ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187).

The series connection of IGBTs investigated by experiments and simulation

J. Sigg, P. Turkes, M. Bruckmann, 1996, PESC Record. 27th Annual IEEE Power Electronics Specialists Conference.