Dimitri A. Antoniadis

发表

Bounding the severity of hysteretic transient effects in partially-depleted SOI CMOS

A. Wei, Dimitri A. Antoniadis, 1996, 1996 IEEE International SOI Conference Proceedings.

Channel Material Innovations for Continuing the Historical MOSFET Performance Increase with Scaling

Ali Khakifirooz, Dimitri A. Antoniadis, I. Aberg, 2006 .

A Multiproject Chip Approach to the Teaching of Analog MOS LSI and VLSI

Yannis Tsividis, Dimitri A. Antoniadis, 1982, IEEE Transactions on Education.

Modeling the I-V characteristics of fully-depleted SOI MOSFETs including self-heating

Dimitri A. Antoniadis, N. D. Arora, L. T. Su, 1994, Proceedings. IEEE International SOI Conference.

Statistical modeling with the Virtual Source MOSFET model

Li Yu, Lan Wei, Duane S. Boning, 2013, 2013 Design, Automation & Test in Europe Conference & Exhibition (DATE).

Supply-voltage optimization for below-70-nm technology-node MOSFETs

Dimitri A. Antoniadis, H. Wakabayashi, Ganesh S. Samudra, 2002 .

SUPREM II -- A Program for IC Process Modeling and Simulation.

Robert W. Dutton, Dimitri A. Antoniadis, S. E. Hansen, 1978 .

Computer-Integrated Fabrication System Structure

Nicole S. Love, Asbjoern M. Bonvik, Stanley B. Gershwin, 1994 .

SOI CMOS as a mainstream low-power technology: a critical assessment

Dimitri A. Antoniadis, 1997, Proceedings of 1997 International Symposium on Low Power Electronics and Design.

Seeking a radically new electronics

Dimitri A. Antoniadis, Henry I. Smith, 1990 .

Quantifying the impact of gate efficiency on switching steepness of quantum-well tunnel-FETs: Experiments, modeling, and design guidelines

Tao Yu, Dimitri A. Antoniadis, Judy L. Hoyt, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

A boundary integral equation approach to oxidation modeling

Dimitri A. Antoniadis, Thye-Lai Tung, D. Antoniadis, 1985, IEEE Transactions on Electron Devices.

Simulation of semiconductor devices using a Galerkin/spherical harmonic expansion approach to solving the coupled Poisson-Boltzmann system

Jacob K. White, Dimitri A. Antoniadis, Khalid Rahmat, 1996, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

Nanostructures Technology, Research, and Applications

Günter Steinmeyer, Shanhui Fan, Mark L. Schattenburg, 1997 .

Computer-Aided Fabrication of Integrated Circuits

Stanley B. Gershwin, Emanuel M. Sachs, Dimitri A. Antoniadis, 1989 .

Computer-Aided Prototyping of Advanced Microsystems Technology

Dimitri A. Antoniadis, 1998 .

Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations

Osama M. Nayfeh, Dimitri A. Antoniadis, Judy L. Hoyt, 2006, IBM J. Res. Dev..

Remembrance of transistors past: Compact model parameter extraction using bayesian inference and incomplete new measurements

Li Yu, Duane S. Boning, Ibrahim M. Elfadel, 2014, 2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC).

Chapter 2. Computer-Integrated Design and Manufacture of Integrated Circuits

Donald E. Troxel, Duane S. Boning, Dimitri A. Antoniadis, 1995 .

LOCOS process-induced stress effect on CMOS SOI characteristics

Dimitri A. Antoniadis, N. D. Arora, Jeffrey W. Sleight, 1996, 1996 IEEE International SOI Conference Proceedings.

Back gated CMOS on SOIAS for dynamic threshold voltage control

Dimitri A. Antoniadis, Anantha P. Chandrakasan, C. Vieri, 1995, Proceedings of International Electron Devices Meeting.

COMPUTATION OF DRAIN AND SUBSTRATE CURRENTS IN MODEL ULTRA-SHORT-CHANNEL NMOSFET'S USING THE HYDRODYNAMIC

Jacob K. White, Dimitri A. Antoniadis, K. Rahmat, 1991 .

Session 25 Device technology — Process technology

Dimitri A. Antoniadis, D. F. Barbe, 1981 .

An ultra-compact virtual source FET model for deeply-scaled devices: Parameter extraction and validation for standard cell libraries and digital circuits

Li Yu, Lan Wei, Duane S. Boning, 2013, 2013 18th Asia and South Pacific Design Automation Conference (ASP-DAC).

A boundary element method for modeling viscoelastic flow in thermal oxidation

Dimitri A. Antoniadis, Thye-Lai Tung, J. Connor, 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

MASTIF (MIT Analysis and Simulation Tools for IC Fabrication) - A Workstation Approach to Fabrication Process Design,

Duane S. Boning, Dimitri A. Antoniadis, 1985 .

SOI CMOS front-end technology: options and tradeoffs

Dimitri A. Antoniadis, D. Antoniadis, 1995, 1995 IEEE International SOI Conference Proceedings.

SESSION XVIII: COMPUTER-AIDED DESIGN TECHNIQUES FOR LSI

Robert W. Dutton, Dimitri A. Antoniadis, 1978 .

Computation of drain and substrate currents in ultra-short-channel nMOSFET's using the hydrodynamic model

Jacob K. White, Dimitri A. Antoniadis, Khalid Rahmat, 1993, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

Statistical library characterization using belief propagation across multiple technology nodes

Li Yu, Duane S. Boning, Ibrahim M. Elfadel, 2015, 2015 Design, Automation & Test in Europe Conference & Exhibition (DATE).

Cross-layer Energy and Performance Evaluation of a Nanophotonic Manycore Processor System Using Real Application Workloads

Chen Sun, George Kurian, Vladimir Stojanovic, 2012, 2012 IEEE 26th International Parallel and Distributed Processing Symposium.

Exploration of Device Design Space to Meet Circuit Speed Targeting 22nm and Beyond

Frederic Boeuf, H.-S. Philip Wong, Dimitri A. Antoniadis, 2009 .

A Density Metric for Semiconductor Technology [Point of View]

H.-S. Philip Wong, Jeffrey Bokor, James D. Plummer, 2020, Proc. IEEE.

Physics and Technology for MOSFETs at 0.1 micron and Below

Dimitri A. Antoniadis, 1993, ESSDERC '93: 23rd European solid State Device Research Conference.

Computer-Aided Fabrication System Implementation.

Stanley B. Gershwin, Donald E. Troxel, Dimitri A. Antoniadis, 1988 .

An analytical framework for first-order CMOS device design

J. A. del Alamo, Dimitri A. Antoniadis, W. T. Lynch, 1998 .

Compact Model Parameter Extraction Using Bayesian Inference, Incomplete New Measurements, and Optimal Bias Selection

Li Yu, Duane S. Boning, Ibrahim M. Elfadel, 2016, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

Back-gated CMOS on SOIAS for dynamic threshold voltage control

Dimitri A. Antoniadis, Anantha P. Chandrakasan, C. Vieri, 1997 .

Efficient performance estimation with very small sample size via physical subspace projection and maximum a posteriori estimation

Li Yu, Duane S. Boning, Ibrahim M. Elfadel, 2014, 2014 Design, Automation & Test in Europe Conference & Exhibition (DATE).

Towards Millimeter-Wave Phased Array Circuits and Systems For Small Form Factor and Power Efficient 5G Mobile Devices

Dimitri A. Antoniadis, Pilsoon Choi, Eugene A. Fitzgerald, 2019, 2019 IEEE International Symposium on Phased Array System & Technology (PAST).

CMOS Performance Scaling

Ali Khakifirooz, Dimitri A. Antoniadis, 2012 .

Corrections to “On the Ballistic Injection Velocity in Deeply Scaled MOSFETs” [Aug 09 1674-1680]

Yang Liu, Dimitri A. Antoniadis, Mathieu Luisier, 2012 .

Computer-Assisted Prototyping of Advanced Microsystems

Anantha P. Chandrakasan, Debashis Saha, Duane S. Boning, 1997 .

Producing Intelligent MMIC's with Multiple Optical I/O's for WDM Systems

Fari Assaderaghi, Hao Wang, Dimitri A. Antoniadis, 2000 .

Ultra-Thin, High Quality HfO2 on Strained-Ge MOS Capacitors with Low Leakage Current

Dimitri A. Antoniadis, Judy L. Hoyt, James T. Teherani, 2014 .

Experimental exploration of ultra-low power CMOS design space using SOIAS dynamic V/sub T/ control technology

Siva G. Narendra, Dimitri A. Antoniadis, Anantha P. Chandrakasan, 1997, 1997 IEEE International SOI Conference Proceedings.

Scanning the issue

Mohamed-Slim Alouini, Tareq Y. Al-Naffouri, Elias Yaacoub, 2019, IEEE Trans. Autom. Control..

Engineering the Electron–Hole Bilayer Tunneling Field-Effect Transistor

Eli Yablonovitch, Dimitri A. Antoniadis, Judy L. Hoyt, 2014, IEEE Transactions on Electron Devices.

SOI MOSFET effective channel mobility

Dimitri A. Antoniadis, L. T. Su, M. J. Sherony, 1994 .

Kinetics of self‐interstitials generated at the Si/SiO2 interface

Yoshiaki Matsushita, Dimitri A. Antoniadis, D. Antoniadis, 1983 .

Comparative mobility degradation in modulation‐doped GaAs devices after e‐beam and x‐ray irradiation

Dimitri A. Antoniadis, Michael R. Melloch, Martin C. Peckerar, 1992 .

Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Ali Khakifirooz, Dimitri A. Antoniadis, Wilman Tsai, 2006 .

Tradeoffs of current drive vs. short-channel effect in deep-submicrometer bulk and SOI MOSFETs

Dimitri A. Antoniadis, L. T. Su, Hang Hu, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

The Oxidation Rate Dependence of Oxidation‐Enhanced Diffusion of Boron and Phosphorus in Silicon

Robert W. Dutton, Dimitri A. Antoniadis, R. Dutton, 1981 .

A new self-aligned quantum-well MOSFET architecture fabricated by a scalable tight-pitch process

Dimitri A. Antoniadis, Xin Zhao, Jianqiang Lin, 2013, 2013 IEEE International Electron Devices Meeting.

Electric-field induced F− migration in self-aligned InGaAs MOSFETs and mitigation

Dimitri A. Antoniadis, Jianqiang Lin, Xiaowei Cai, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Compact Models and the Physics of Nanoscale FETs

Dimitri A. Antoniadis, Mark S. Lundstrom, D. Antoniadis, 2014, IEEE Transactions on Electron Devices.

Short-channel effects in deep-submicrometer SOI MOSFETS

Dimitri A. Antoniadis, L. T. Su, J. B. Jacobs, 1993, Proceedings of 1993 IEEE International SOI Conference.

Lunar perturbations in columnar electron content and their interpretation in terms of dynamo electrostatic fields. [in ionosphere]

Dimitri A. Antoniadis, P. A. Bernhardt, D. Antoniadis, 1976 .

Accounting for experimentally observed transients in simulation of partially-depleted SOI MOSFET's

Dimitri A. Antoniadis, M. J. Sherony, A. Wei, 1995, 1995 IEEE International SOI Conference Proceedings.

Use of focused-ion-beam and modeling to optimize submicron MOSFET characteristics

James E. Murguia, M. Peckerar, Neil Goldsman, 1998 .

Stability and composition of Ni–germanosilicided Si1−xGex films

Dimitri A. Antoniadis, Kin Leong Pey, Eugene A. Fitzgerald, 2004 .

Fabrication of back-gated complementary metal-oxide semiconductor devices using mixed and matched optical and x-ray lithographies

Dimitri A. Antoniadis, Henry I. Smith, Isabel Y. Yang, 1996 .

Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs

Dimitri A. Antoniadis, Judy L. Hoyt, Winston Chern, 2016, IEEE Transactions on Electron Devices.

Strained Si on insulator technology: from materials to devices

Dimitri A. Antoniadis, Thomas A. Langdo, Isaac Lauer, 2004 .

Silicon self-interstitial supersaturation during phosphorus diffusion

Dimitri A. Antoniadis, R. Harris, D. Antoniadis, 1983 .

Indium channel implants for improved MOSFET behavior at the 100-nm channel length regime

Dimitri A. Antoniadis, G. G. Shahidi, Henry I. Smith, 1989 .

LOCOS-induced stress effects on thin-film SOI devices

Dimitri A. Antoniadis, Jeffrey W. Sleight, Cheng-Liang Huang, 1997 .

Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors

Dimitri A. Antoniadis, Judy L. Hoyt, John Hennessy, 2010 .

An accurate gate length extraction method for sub-quarter micron MOSFET's

Dimitri A. Antoniadis, J. V. Faricelli, Cheng-Liang Huang, 1996 .

Record Maximum Transconductance of 3.45 mS/ $\mu \text{m}$ for III-V FETs

Dimitri A. Antoniadis, Jianqiang Lin, Xiaowei Cai, 2016, IEEE Electron Device Letters.

MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

Dimitri A. Antoniadis, Christopher W. Leitz, Eugene A. Fitzgerald, 2002 .

An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors—Part II: Experimental Verification

Dimitri A. Antoniadis, Shaloo Rakheja, Mark S. Lundstrom, 2015, IEEE Transactions on Electron Devices.

MIT virtual source GaNFET‐high voltage (MVSG‐HV) model: A physics based compact model for HV‐GaN HEMTs

Dimitri A. Antoniadis, Ujwal Radhakrishna, Tomas Palacios, 2014 .

Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kinetics

Dimitri A. Antoniadis, D. Antoniadis, I. Moskowitz, 1982 .

The lateral effect of oxidation on boron diffusion in 〈100〉 silicon

Robert W. Dutton, Dimitri A. Antoniadis, R. Dutton, 1979 .

MVS Nanotransistor Model (Silicon)

Dimitri A. Antoniadis, Shaloo Rakheja, D. Antoniadis, 2015 .

Lateral‐surface‐superlattice and quasi‐one‐dimensional GaAs/GaAlAs modulation‐doped field‐effect transistors fabricated using x‐ray and deep‐ ultraviolet lithography

Dimitri A. Antoniadis, Henry I. Smith, Wei-Kan Chu, 1988 .

Electron Velocity in Sub-50-Nm Channel Mosfets

Dimitri A. Antoniadis, Ihsan J. Djomehri, Anthony Lochtefeld Microsystems, 2001 .

Design of Si/SiGe heterojunction complementary metal-oxide-semiconductor transistors

Dimitri A. Antoniadis, K. Ismail, M. A. Armstrong, 1995, Proceedings of International Electron Devices Meeting.

Ultimate device scaling: Intrinsic performance comparisons of carbon-based, InGaAs, and Si field-effect transistors for 5 nm gate length

Jeffrey Bokor, Dimitri A. Antoniadis, Mathieu Luisier, 2011, 2011 International Electron Devices Meeting.

A boundary integral equation approach to oxidation modeling

Dimitri A. Antoniadis, Thye-Lai Tung, 1985 .

High performance self‐aligned sub‐100 nm metal–oxide‐semiconductor field‐effect transistors using x‐ray lithography

Dimitri A. Antoniadis, Martin Burkhardt, Vincent V. Wong, 1994 .

Combining and matching optical, electron‐beam, and x‐ray lithographies in the fabrication of Si complementary metal–oxide–semiconductor circuits with 0.1 and sub‐0.1 μm features

Scott Silverman, Dimitri A. Antoniadis, Henry I. Smith, 1995 .

Capacitance Modeling for Deep Submicron Thin Gate Oxide MOSFETs

Dimitri A. Antoniadis, Rafael Rios, Narain D. Arora, 1995, ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference.

Two-dimensional doping profile characterization of MOSFETs by inverse modeling using I-V characteristics in the subthreshold region

Dimitri A. Antoniadis, Z. K. Lee, M. B. McIlrath, 1999 .

Calibrated Hydrodynamic Simulation of Deeply-Scaled Well-Tempered Nanowire Field Effect Transistors

Osama M. Nayfeh, Dimitri A. Antoniadis, 2007 .

Effect of floating-body charge on SOI MOSFET design

Dimitri A. Antoniadis, M. J. Sherony, A. Wei, 1998 .

Negative transconductance and negative differential resistance in a grid‐gate modulation‐doped field‐effect transistor

Dimitri A. Antoniadis, Henry I. Smith, Wei-Kan Chu, 1989 .

Parasitic bipolar gain reduction and the optimization of 0.25-/spl mu/m partially depleted SOI MOSFETs

Dimitri A. Antoniadis, Jeffrey W. Sleight, Robert Flatley, 1999 .

Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

Dimitri A. Antoniadis, Thomas A. Langdo, Christopher W. Leitz, 2001 .

Computation of drain and substrate currents in ultra-short-channel nMOSFETs using the hydrodynamic model

Jacob K. White, Dimitri A. Antoniadis, K. Rahmat, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Nanometer-Scale III-V MOSFETs

Dimitri A. Antoniadis, Xin Zhao, Wenjie Lu, 2016, IEEE Journal of the Electron Devices Society.

Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

Dimitri A. Antoniadis, Judy L. Hoyt, Dalaver H. Anjum, 2003 .

Merging focused ion beam patterning and optical lithography in device and circuit fabrication

James E. Murguia, Dimitri A. Antoniadis, John Melngailis, 1990 .

Quantum phenomena in field-effect-controlled semiconductor nanostructures

Dimitri A. Antoniadis, Terry P. Orlando, Henry I. Smith, 1991, Proc. IEEE.

Three-Dimensional Integrated Circuit Technology

Dimitri A. Antoniadis, 1983 .

Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (x

Dimitri A. Antoniadis, Christopher W. Leitz, Eugene A. Fitzgerald, 2001 .

On Redistribution of Boron during Thermal Oxidation of Silicon

Robert W. Dutton, Dimitri A. Antoniadis, Hee-Gook Lee, 1979 .

Surface‐superlattice effects in a grating‐gate GaAs/GaAlAs modulation doped field‐effect transistor

Dimitri A. Antoniadis, Henry I. Smith, Wei-Kan Chu, 1988 .

Boron in Near‐Intrinsic and Silicon under Inert and Oxidizing Ambients—Diffusion and Segregation

Robert W. Dutton, Dimitri A. Antoniadis, R. Dutton, 1978 .

High quality Ge on Si by epitaxial necking

Dimitri A. Antoniadis, Thomas A. Langdo, Christopher W. Leitz, 2000 .

A high-performance scalable submicron MOSFET for mixed analog/digital applications

Dimitri A. Antoniadis, L. T. Su, J. A. Yasaitis, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates

Dimitri A. Antoniadis, Judy L. Hoyt, Winston Chern, 2012 .

Traps in germanium nanocrystal memory and effect on charge retention : Modeling and experimental measurements

Dimitri A. Antoniadis, Eugene A. Fitzgerald, Wai Kin Chim, 2005 .

MVS 1.0.1 Nanotransistor Model (Silicon)

Dimitri A. Antoniadis, Shaloo Rakheja, D. Antoniadis, 2013 .

On the Relationship Between Carrier Mobility and Velocity in sub-50 nm MOSFETs via Calibrated Monte Carlo Simulation

Shaofeng Yu, Osama M. Nayfeh, Dimitri A. Antoniadis, 2004 .

Oxidation‐Induced Point Defects in Silicon

Dimitri A. Antoniadis, D. Antoniadis, 1982 .

Channel and source/drain engineering in high-performance sub-0.1 /spl mu/m NMOSFETs using X-ray lithography

Dimitri A. Antoniadis, L. T. Su, Hang Hu, 1994, Proceedings of 1994 VLSI Technology Symposium.

Diffusion of indium in silicon inert and oxidizing ambients

Dimitri A. Antoniadis, D. Antoniadis, I. Moskowitz, 1982 .

Optimization of series resistance in sub-0.2 /spl mu/m SOI MOSFETs

Dimitri A. Antoniadis, L. T. Su, Hang Hu, 1993, Proceedings of IEEE International Electron Devices Meeting.

Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

Dimitri A. Antoniadis, Kin Leong Pey, Eugene A. Fitzgerald, 2002 .

Measurement and modeling of self-heating in SOI nMOSFET's

Kenneth E. Goodson, Dimitri A. Antoniadis, L. T. Su, 1994 .

A Galerkin method for the arbitrary order expansion in momentum space of the Boltzmann equation using spherical harmonics

Jacob K. White, Dimitri A. Antoniadis, K. Rahmat, 1994, Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V.

Zone‐melting recrystallization of encapsulated silicon films on SiO2—morphology and crystallography

Dimitri A. Antoniadis, Michael W. Geis, Henry I. Smith, 1982 .

Tunable frequency Gunn diodes fabricated by focused ion beam implantation

L. J. Mahoney, Dimitri A. Antoniadis, John Melngailis, 1988 .

MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

Dimitri A. Antoniadis, Ujwal Radhakrishna, 2015 .

Novel intrinsic and extrinsic engineering for high-performance high-density self-aligned InGaAs MOSFETs: Precise channel thickness control and sub-40-nm metal contacts

Dimitri A. Antoniadis, Jianqiang Lin, D. Antoniadis, 2014, 2014 IEEE International Electron Devices Meeting.

Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric

Dim-Lee Kwong, Dimitri A. Antoniadis, Chandra Mouli, 2005 .

Diffusion in Silicon

Dimitri A. Antoniadis, D. Antoniadis, 1983 .

Device Engineering to Improve SRAM Static Noise Margin

Frederic Boeuf, Thomas Skotnicki, Dimitri A. Antoniadis, 2010 .

MIT Virtual Source GaNFET-RF ( MVSG-RF) Model

Dimitri A. Antoniadis, Ujwal Radhakrishna, 2014 .

Process and device simulation for MOS-VLSI circuits

Robert W. Dutton, Dimitri A. Antoniadis, William G. Oldham, 1983 .

III–V CMOS: What have we learned from HEMTs?

Dimitri A. Antoniadis, Donghyun Jin, Dae-Hyun Kim, 2011, IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials.

Negative Capacitance Behavior in a Leaky Ferroelectric

Asif Islam Khan, Dimitri A. Antoniadis, Sayeef Salahuddin, 2016, IEEE Transactions on Electron Devices.

An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors—Part I: Capturing Effects of Carrier Degeneracy, Drain-Bias Dependence of Gate Capacitance, and Nonlinear Channel-Access Resistance

Dimitri A. Antoniadis, Shaloo Rakheja, Mark S. Lundstrom, 2015, IEEE Transactions on Electron Devices.

Lateral extent of oxidation‐enhanced diffusion of phosphorus in 〈100〉 silicon

Dimitri A. Antoniadis, K. Taniguchi, 1985 .

An Ambipolar Virtual-Source-Based Charge-Current Compact Model for Nanoscale Graphene Transistors

Phaedon Avouris, Dimitri A. Antoniadis, Shaloo Rakheja, 2014, IEEE Transactions on Nanotechnology.

Oxidation‐enhanced diffusion of arsenic and phosphorus in near‐intrinsic 〈100〉 silicon

Robert W. Dutton, Dimitri A. Antoniadis, R. Dutton, 1978 .

X-ray lithography for sub-100-nm-channel-length transistors using masks fabricated with conventional photolithography, anisotropic etching, and oblique shadowing

Dimitri A. Antoniadis, Stephen Y. Chou, Henry I. Smith, 1985 .

The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si ‐ SiO Interface during Thermal Oxidation of Silicon

Robert W. Dutton, Dimitri A. Antoniadis, William A. Tiller, 1981 .

Strain relaxation in patterned strained silicon directly on insulator structures

Dimitri A. Antoniadis, Judy L. Hoyt, Robert Hull, 2005 .

Graphoepitaxy of silicon on fused silica using surface micropatterns and laser crystallization

Dimitri A. Antoniadis, Michael W. Geis, Henry I. Smith, 1979 .