Tomoya Sugahara

发表

Role of Dislocation in InGaN/GaN Quantum Wells Grown on Bulk GaN and Sapphire Substrates

Shiro Sakai, Tomoya Sugahara, 2000 .

Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells

Shiro Sakai, Tao Wang, Tomoya Sugahara, 1998 .

Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

Satoshi Kurai, Hisao Sato, Kenji Yamashita, 1998 .

LASERS, OPTICS, AND OPTOELECTRONICS 1933 Temperature and polarization dependence of LiNbO3 quasiphase-matched wavelength converters

Martin Richardson, Robert E. Peale, Frank Fuchs, 1999 .

V-shaped defects in InGaN/GaN multiquantum wells

Yoshiki Naoi, Shiro Sakai, Tomoya Sugahara, 1999 .

Role of Dislocation in InGaN Phase Separation

Yoshiki Naoi, Shiro Sakai, Tomoya Sugahara, 1998 .

Photoluminescence studies of InGaN/GaN multi-quantum wells

Tao Wang, Shiro Sakai, Tomoya Sugahara, 2000 .

Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire

Marek Osinski, Jinhyun Lee, Shiro Sakai, 2000 .

Annealing of GaN-InGaN Multi Quantum Wells : Correlation between the Bandgap and Yellow Photoluminescence

Saulius Juodkazis, Hiroaki Misawa, Shigeki Matsuo, 2000 .

Fabrication of high-performance 370 nm ultraviolet light-emitting diodes

Shiro Sakai, Tomoya Sugahara, Young-Bae Lee, 2004 .

Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength

Saulius Juodkazis, Hiroaki Misawa, Hong-Bo Sun, 1999 .

Enormously high-peak-power optical pulse generation from a single-transverse-mode GaInN blue-violet laser diode

Masao Ikeda, Hiroyuki Yokoyama, Masaru Kuramoto, 2010 .

Optical investigation of InGaN/GaN multiple quantum wells

Shiro Sakai, Tao Wang, Tomoya Sugahara, 1999 .