Masakazu Yamaguchi

IEGT design criterion for reducing EMI noise

Ichiro Omura, Masahiro Tanaka, Tsuneo Ogura, 2004, ISPSD 2004.

600 V trench-gate NPT-IGBT with excellent low on-state voltage

S. Teramae, Tsuneo Ogura, Masakazu Yamaguchi, 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

New discrete IGBT development for consumer use - application-specific advanced discrete IGBTs with optimized chip design

Hideaki Ninomiya, Shinichi Umekawa, Masakazu Yamaguchi, 2010, The 2010 International Power Electronics Conference - ECCE ASIA -.

Non-destructive current measurement for surface mounted power MOSFET on VRM board using magnetic field probing technique

Ichiro Omura, Yoshihiro Yamaguchi, Yoshiko Ikeda, 2009, ISPSD 2009.

High-speed 600V NPT-IGBT with unclamped inductive switching (UIS) capability

Ichiro Omura, Tsuneo Ogura, Masakazu Yamaguchi, 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..

Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs

Wataru Saito, Tomohiro Nitta, Masakazu Yamaguchi, 2010, IEEE Electron Device Letters.

Dynamic punch-through design of high-voltage diode for suppression of waveform oscillation and switching loss

Masanori Tsukuda, Yoko Sakiyama, Masakazu Yamaguchi, 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

Mode-transition optimized 4.5 kV IGTT (IGBT mode turn-off thyristor)

Hiromichi Ohashi, Tsuneo Ogura, Masakazu Yamaguchi, 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.