Osama O. Awadelkarim

发表

The degradation of MOSFETs induced by the via etching of interlayer low-k polymers

Levent Trabzon, Osama O. Awadelkarim, L. Trabzon, 2001, ICM 2001 Proceedings. The 13th International Conference on Microelectronics..

Parylene C as a multifunctional insulator for all-organic flexible electronics

Akhlesh Lakhtakia, Osama O. Awadelkarim, Ibrahim H. Khawaji, 2019, Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring.

Silicon micromachining and its impact on materials and device properties: plasma etching damage issues

Osama O. Awadelkarim, Stephen J. Fonash, T. Gu, 1995, Smart Structures.

Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs

Osama O. Awadelkarim, Jifa Hao, Chris Kendrick, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

High-Temperature Reverse-Bias Stressing of Thin Gate Oxides in Power Transistors

Osama O. Awadelkarim, Jifa Hao, Mark Rioux, 2014 .

An effective lithography training module adapting semianalytical calculation approaches

Osama O. Awadelkarim, Atilla Ozgur Cakmak, Evrim Colak, 2021, Journal of the Society for Information Display.

Changes in material properties of low- k interlayer dielectric polymers induced by exposure to plasmas

Levent Trabzon, Osama O. Awadelkarim, O. Awadelkarim, 2003 .

Temperature-dependent dynamic moduli of Parylene-C columnar microfibrous thin films

Akhlesh Lakhtakia, Osama O. Awadelkarim, Wasim Orfali, 2016 .

Modified three terminal charge pumping technique applied to vertical transistor structures

Osama O. Awadelkarim, Lucas Jay Passmore, Gary M. Dolny, 2005 .

Fowler-Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping

Osama O. Awadelkarim, Lucas Jay Passmore, Gary M. Dolny, 2006 .

Damage to n-MOSFETs from electrical stress Relationship to processing damage and impact on device reliability

Levent Trabzon, Osama O. Awadelkarim, O. Awadelkarim, 1998 .

Extracting the Richardson constant: IrOx/n-ZnO Schottky diodes

Osama O. Awadelkarim, Steven M. Durbin, Suzanne E. Mohney, 2009 .

Hydrogen and processing damage in CMOS device reliability: defect passivation and depassivation during plasma exposures and subsequent annealing

Osama O. Awadelkarim, Stephen J. Fonash, Y. D. Chan, 1995 .

Observation of a new type of plasma etching damage: Damage to N-channel transistors arising from inductive metal loops

Osama O. Awadelkarim, Y. D. Chan, F. Preuninger, 1996 .

The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

Levent Trabzon, Osama O. Awadelkarim, Jerzy Ruzyllo, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

Plasma‐charging damage to gate SiO2 and SiO2/Si interfaces in submicron n‐channel transistors: Latent defects and passivation/depassivation of defects by hydrogen

Osama O. Awadelkarim, Stephen J. Fonash, Y. D. Chan, 1996 .