Oliver Triebl

Simulation study of an electrically read- and writable magnetic logic gate

Siegfried Selberherr, Thomas Windbacher, Oliver Triebl, 2013 .

Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures

Tibor Grasser, Oliver Triebl, Robert Entner, 2007, Microelectron. Reliab..

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Tibor Grasser, Oliver Triebl, Hajdin Ceric, 2010, Microelectronics and reliability.

Investigation of Vector Discretization Schemes for Box Volume Methods

Tibor Grasser, Oliver Triebl, Christian Doppler, 2007 .

Numerical Power/HV Device Modeling

Oliver Triebl, Tibor Grasser, 2010 .

Physical modeling of hot-carrier degradation for short- and long-channel MOSFETs

Tibor Grasser, Jacopo Franco, Ben Kaczer, 2014, 2014 IEEE International Reliability Physics Symposium.

Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions

Tibor Grasser, Oliver Triebl, Hans Kosina, 2007 .

Interface states charges as a vital component for hc degradation modeling.

E. Seebacher, Tibor Grasser, Christoph Jungemann, 2010 .

Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET

Tibor Grasser, Christoph Jungemann, Oliver Triebl, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.