S. Schwantes

Analysis of the back gate effect on the breakdown behaviour of SOI LDMOS transistors

V. Dudek, S. Schwantes, T. Florian, 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

Impact of the back gate effect on bipolar junction transistors in smart power SOI technologies

V. Dudek, S. Schwantes, M. Graf, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

A new leakage mechanism in SOI smart power technologies

A. Heid, V. Dudek, S. Schwantes, 2005, 2005 IEEE International SOI Conference Proceedings.

Analysis of the Back-Gate Effect on the On-State Breakdown Voltage of Smartpower SOI Devices

V. Dudek, S. Schwantes, M. Graf, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Slow crack growth in spinel in water

W. Elber, S. Schwantes, W. Elber, 1983 .

Analysis and optimization of the back-gate effect on lateral high-voltage SOI devices

V. Dudek, S. Schwantes, T. Florian, 2005, IEEE Transactions on Electron Devices.

Relevance of Gate Current for the Functionality of Deep Submicron CMOS Circuits

W. Krautschneider, S. Schwantes, 2001, 31st European Solid-State Device Research Conference.