Yves Campidelli

发表

Thin-film devices for low power applications

Nicolas Loubet, Stephane Monfray, Claire Fenouillet-Beranger, 2010 .

3Dstacked channels: howseries resistances canlimit 3Ddevices performance

Yves Campidelli, E. Bernard, Philippe Coronel, 2007 .

Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below

C. Laviron, Claire Fenouillet-Beranger, Stephane Denorme, 2009, ESSDERC 2009.

Strained-Si for CMOS 65nm node : Si0.8Ge0.2 SRB or “Low Cost” approach ?

C. Laviron, Frederic Boeuf, Yves Campidelli, 2004 .

Pushing conventional SiGe HBT technology towards "Dotfive" terahertz

Yves Campidelli, Alain Chantre, Pascal Chevalier, 2010, The 5th European Microwave Integrated Circuits Conference.

Influence of Annealing Treatments on the Morphology and Electrical Properties of GeOI Substrates Obtained by Ge Condensation

Yves Morand, Yves Campidelli, S. Cristoloveanu, 2007 .

Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications

Nicolas Loubet, Stephane Monfray, G. Bidal, 2010 .

An efficient wet-cleaning of SiGe virtual substrates and of thick, pure Ge layers on Si(001) after a chemical mechanical planarization step

Yves Campidelli, Pascal Besson, Y. Campidelli, 2006 .

Optical recombination from excited states in Ge/Si self-assembled quantum dots

Yves Campidelli, Olivier Kermarrec, Daniel Bouchier, 2001 .

Near-infrared waveguide photodetector with Ge/Si self-assembled quantum dots

Yves Campidelli, Isabelle Sagnes, Olivier Kermarrec, 2002 .

Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices

Frederic Allibert, Yves Campidelli, N. Kernevez, 2006 .

The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?

Yves Morand, Yves Campidelli, Sorin Cristoloveanu, 2008 .

Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection

Yves Campidelli, Isabelle Sagnes, Sophie Bouchoule, 2004 .

Electroluminescence of Ge'Si self-assembled quantum dots grown by chemical vapor deposition

Yves Campidelli, Isabelle Sagnes, Frédéric Aniel, 2000 .

Silicon-on-insulator and SiGe waveguide photodetectors with Ge/Si self-assembled islands

Yves Campidelli, Isabelle Sagnes, Gilles Patriarche, 2003 .

Impact of the gate stack on the electrical performances of 3D multi-channel MOSFET (MCFET) on SOI

X. Garros, O. Faynot, Yves Campidelli, 2007 .

Chemical vapour etching of Si, SiGe and Ge with HCl; applications to the formation of thin relaxed SiGe buffers and to the revelation of threading dislocations

Yves Campidelli, Y. Bogumilowicz, R. Truche, 2005 .