Philipp Riess

Dielectric absorption of low-k materials: extraction, modelling and influence on SAR ADCs

Dieter Draxelmayr, Gerhard Knoblinger, Michael Kropfitsch, 2006, 2006 IEEE International Symposium on Circuits and Systems.

Semiconductor device with integrated capacitance structure

Peter Baumgartner, Philipp Riess, 2005 .

Operating method for semiconductor component

Harald Gossner, Wolfgang Stadler, Kai Esmark, 2002 .

Reliability aspects of gate oxide under ESD pulse stress

Thomas Pompl, Wolfgang Stadler, Kai Esmark, 2007, 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).

Electrostatic discharge induced oxide breakdown characterization in a 0.1 /spl mu/m CMOS technology

Akram A. Salman, Dimitris E. Ioannou, Mujahid Muhammad, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).