Daniel Mathiot

发表

A Fully Characterizable Asynchronous Multiphase Delay Generator

Martin Zlatanski, Wilfried Uhring, Jean-Pierre Le Normand, 2011, IEEE Transactions on Nuclear Science.

Integrated Circuit Architectures for High-Speed Time-Resolved Imaging

Jean-Pierre Le Normand, Wilfried Uhring, Martin Zlatanski, 2010, 2010 Fourth International Conference on Sensor Technologies and Applications.

Architectures and signal reconstruction methods for nanosecond resolution Integrated Streak Camera in standard CMOS technology

Jean-Pierre Le Normand, Wilfried Uhring, Daniel Mathiot, 2010, 2010 Conference on Design and Architectures for Signal and Image Processing (DASIP).

A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs

Daniel Mathiot, Christophe Lallement, Fabien Prégaldiny, 2002 .

Ostwald ripening of end-of-range defects in silicon

Daniel Mathiot, A. Claverie, D. Mathiot, 1998 .

Modeling of phosphorus diffusion in Ge accounting for a cubic dependence of the diffusivity with the electron concentration

Daniel Mathiot, Y. Leroy, J. Ponpon, 2010 .

Dopant diffusion in silicon: A consistent view involving nonequilibrium defects

Daniel Mathiot, J. Pfister, D. Mathiot, 1984 .

12 × 7.14 GS/s rate time-resolved BiCMOS imager

Wilfried Uhring, Martin Zlatanski, Jean-Pierre Le Normand, 2010, Proceedings of the 8th IEEE International NEWCAS Conference 2010.

Study of low temperature MOCVD deposition of TiN barrier layer for copper diffusion in high aspect ratio through silicon vias

Sylvain Maitrejean, Daniel Mathiot, Chris E. Jones, 2014 .

Influence of the nonequilibrium vacancies on the diffusion of phosphorus into silicon

Daniel Mathiot, J. Pfister, D. Mathiot, 1982 .

Simulation of the sub-melt laser anneal process in 45 CMOS technology—Application to the thermal pattern effects

Pierre Morin, M. Bidaud, Daniel Mathiot, 2008 .

A Model for Boron T.E.D. in Silicon: Full Couplings of Dopant with Free and Clustered Interstitials

Daniel Mathiot, P. Rivallin, E. Guichard, 2002 .

Modeling of dopant diffusion in silicon: An effective diffusivity approach including point‐defect couplings

Daniel Mathiot, D. Mathiot, Serge Martin, 1991 .

Streak camera in standard (Bi)CMOS (bipolar complementary metal-oxide-semiconductor) technology

Wilfried Uhring, Martin Zlatanski, Daniel Mathiot, 2010 .

Diffusion of indium in GaSb

Daniel Mathiot, D. Mathiot, G. Edelin, 1980 .

Links between oxide, interface, and border traps in high‐temperature annealed Si/SiO2 systems

Daniel Mathiot, Daniel M. Fleetwood, Marty R. Shaneyfelt, 1994 .

Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model

Daniel Mathiot, Christophe Lallement, Fabien Prégaldiny, 2004 .

An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs

Daniel Mathiot, Christophe Lallement, Ronald Van Langevelde, 2004 .