Yi-Lun Chou

Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs

Meng-Chyi Wu, Yung-Hsiang Lin, Shou-Yi Kuo, 2010, Microelectron. Reliab..

Enhanced characteristics of blue InGaN∕GaN light-emitting diodes by using selective activation to modulate the lateral current spreading length

Yung-Hsiang Lin, Ray-Ming Lin, Ming C. Wu, 2008 .

Nanometer-scale conversion of Si3N4 to SiOx

Tien-Sheng Chao, Wen-Feng Hsieh, J.-W. Chang, 2000 .