Kevin K. H. Chan

发表

Charge transport studies of polymeric photovoltaic thin films with an electron blocking and trapping layer

Shu Kong So, Harrison K. H. Lee, Kevin K. H. Chan, 2012, Photonics Europe.

ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing

Douglas M. Bishop, Kevin K. H. Chan, W. Haensch, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

FinFET resistance mitigation through design and process optimization

Ying Zhang, Chung-Hsun Lin, Wilfried Haensch, 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

A silicon nanocrystals based memory

Sandip Tiwari, Hussein I. Hanafi, Farhan Rana, 1996 .

80 nm poly':'silicon gated n-FETs with ultra-thin Ah03 gate dielectric for ULSI applications

Kevin K. H. Chan, E. Cartier, A. Ajmera, 2000 .

Strained Si CMOS (SS CMOS) technology: Opportunities and challenges

Keith A. Jenkins, Byoung Hun Lee, P. Oldiges, 2003 .

Charge injection and transport studies of poly(2,7-carbazole) copolymer PCDTBT and their relationship to solar cell performance

Franky So, Shu Kong So, Sai-Wing Tsang, 2012 .

Secondary defect formation in bonded silicon-on-insulator after boron implantation

Kevin K. H. Chan, A. F. Saavedra, E. E. Jones, 2004 .

Plasma enhanced chemical vapor deposition of TiO2 in microwave‐radio frequency hybrid plasma reactor

Kevin K. H. Chan, Y. H. Lee, M. J. Brady, 1995 .

Search for mSUGRA in single-electron events with jets and large missing transverse energy in pp collisions at p s = 1.8 TeV

Kevin K. H. Chan, F. Canelli, K. Genser, 2002 .

Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector Regions

Kevin K. H. Chan, T. Ning, P. Hashemi, 2018, IEEE Journal of the Electron Devices Society.

Search for Magnetic Monopoles in √s=7 TeV pp Collisions with the ATLAS Detector

J. T. Childers, Chang Wei Loh, H. S. Bansil, 2012 .

Measurement of the underlying event in jet events from 7 (Formula presented.) proton–proton collisions with the ATLAS detector

J. T. Childers, Chang Wei Loh, H. S. Bansil, 2014, 1406.0392.

Bonding of thin films on 200 mm silicon wafers using chemical mechanical polishing

Kevin K. H. Chan, S. Tiwari, P. Solomon, 1998, 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199).

The effect of the flow of silane on the properties of a‐Si:H deposited by concentric‐electrode radio frequency glow‐discharge

Kevin K. H. Chan, J. Conde, M. Arienzo, 1992 .

A low power 77 K nano-memory with single electron nano-crystal storage

Kevin K. H. Chan, S. Tiwari, H. Hanafi, 1995, 1995 53rd Annual Device Research Conference Digest.

Evidence of color coherence effects in W+jets events from p p collisions at s =1.8 TeV

Andrew G. White, J. S. Hoftun, Kevin K. H. Chan, 1999 .

In situ spatially resolved surface characterization of realistic semiconductor structure after reactive ion etching process

Kevin K. H. Chan, M. Jaso, G. Oehrlein, 1988 .

Surface analysis of realistic semiconductor microstructures

Kevin K. H. Chan, G. Rubloff, M. Jaso, 1989 .

Charge Transport Study of OPV Polymers and Their Bulk Heterojunction Blends by Admittance Spectroscopy

Kevin K. H. Chan, H. Lee, S. So, 2015 .

Role of electron blocking and trapping layers in transport characterization of a photovoltaic polymer poly(3-hexylthiophene)

Kevin K. H. Chan, H. Lee, S. So, 2012 .

High-Bandgap a-SI:H Deposited by Concentric-Electrode rf Glow Discharge

Kevin K. H. Chan, V. Chu, J. Conde, 1992 .

Prospects of High-Ge-Content Strained SiGe for Advanced FinFET Generations

Kevin K. H. Chan, J. Bruley, P. Hashemi, 2016 .

The High Temperature Stability and Relaxation of UHV/CVD SiGe Thin Films

Kevin K. H. Chan, S. Stiffler, M. Goorsky, 1992 .

Deposition of amorphous silicon using a tubular reactor with concentric‐electrode confinement

Kevin K. H. Chan, J. Conde, J. Cuomo, 1992 .

The role of dislocation‐dislocation interactions in the relaxation of pseudomorphically strained semiconductors. II. Experiment−The high‐temperature relaxation of ultrahigh‐vacuum chemical‐vapor‐deposited SiGe thin films

Kevin K. H. Chan, S. Stiffler, M. Goorsky, 1992 .

The role of dislocation‐dislocation interactions in the relaxation of pseudomorphically strained semiconductors. I. Theory

Kevin K. H. Chan, S. Stiffler, M. Goorsky, 1992 .

Investigations of Silicon Nano-crystal Floating Gate Memories

Kevin K. H. Chan, S. Tiwari, J. Welser, 2000 .

A Self-Aligned Silicide Process Utilizing Ion Implants for Reduced Silicon Consumption and Control of the Silicide Formation Temperature

Kevin K. H. Chan, K. Guarini, G. Cohen, 2002 .

Bridge-gap buried digit-line for high density stacked DRAMs

Detlef Becker, Kevin K. Chan, Pierre Fazan, 1991, [1991 Proceedings] Eleventh IEEE/CHMT International Electronics Manufacturing Technology Symposium.

Search for single top quark production in pp@? collisions at s=1.96 TeV [rapid communication]

William R. Lee, Kevin K. H. Chan, R. E. Hall, 2005 .

Extendibility of Cu Damascene to 0.1 μm Wide Interconnections

Cyprian Emeka Uzoh, Kevin K. Chan, C-K. Hu, 1998 .

Single charge and confinement effects in nano-crystal memories

Sandip Tiwari, Hussein I. Hanafi, Leathen Shi, 1996 .

Charge transport study of semiconducting polymers and their bulk heterojunction blends by capacitance measurements

Kevin K. H. Chan, S. Tsang, S. So, 2013 .

High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks With In-Situ O3 Treatment

Kevin K. H. Chan, E. Cartier, V. Narayanan, 2017, IEEE Electron Device Letters.

SAGD Process Monitoring in Heavy Oil Reservoir Using UWB Radar Techniques

Pierre Boulanger, Karumudi Rambabu, Kevin Khee-Meng Chan, 2016, IEEE Transactions on Microwave Theory and Techniques.

Material Characterization of Arbitrarily Shaped Dielectrics Based on Reflected Pulse Characteristics

Karumudi Rambabu, Adrian Eng-Choon Tan, Kevin K. H. Chan, 2015, IEEE Transactions on Microwave Theory and Techniques.

Thermal Stability of Strained Si on Relaxed Si 1−x Ge x Buffer Layers

Kevin K. H. Chan, J. Jordan-Sweet, S. Koester, 2001 .

Electrical activation in silicon-on-insulator after low energy boron implantation

K. S. Jones, Kevin K. H. Chan, A. F. Saavedra, 2004 .

Comparison of { 311 } Defect Evolution in SIMOX and Bonded SOI Materials

K. S. Jones, Kevin K. H. Chan, A. F. Saavedra, 2004 .

N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers

Kevin K. H. Chan, J. Jordan-Sweet, D. Boyd, 2005 .

Size-selected Ni catalyst islands for single-walled carbon nanotube arrays

Kevin K. H. Chan, K. Ostrikov, I. Levchenko, 2008 .

On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors

Tak H. Ning, Jin Cai, Ramachandran Muralidhar, 2014, IEEE Journal of the Electron Devices Society.

Complementary thin-base symmetric lateral bipolar transistors on SOI

Tak H. Ning, Jin Cai, Wilfried E. Haensch, 2011, 2011 International Electron Devices Meeting.

High performance PMOS with strained high-Ge-content SiGe fins for advanced logic applications

Kevin K. H. Chan, V. Narayanan, J. Bruley, 2017, 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Deep trench plasma etching of single crystal silicon using SF6/O2 gas mixtures

Kevin K. Chan, Christopher P. D'Emic, Kevin K. H. Chan, 1992 .

First demonstration of high-Ge-content strained-Si1−xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications

Ali Khakifirooz, Karthik Balakrishnan, Sebastian U. Engelmann, 2014, 2014 IEEE International Electron Devices Meeting.

Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond

Kevin K. H. Chan, D. Antoniadis, P. Hashemi, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.