Wolfgang Rösner

发表

Influence of crystal orientation and body doping on trigate transistor performance

Michael Specht, Erhard Landgraf, Wolfgang Rösner, 2006 .

A method for producing a non-volatile flash semiconductor memory

Michael Specht, Franz Hofmann, Wolfgang Rösner, 2002 .

NVM based on FinFET device structures

Michael Specht, Wolfgang Rösner, Franz Hofmann, 2005 .

Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications

Michael Specht, Franz Hofmann, Wolfgang Rösner, 2005 .

Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results

Wolfgang Rösner, Frank Schwierz, Ralf Granzner, 2006 .

20 nm electron beam lithography and reactive ion etching for the fabrication of double gate FinFET devices

Johannes Kretz, Wolfgang Rösner, Jessica Hartwich, 2003 .

Design considerations for fully depleted SOI transistors in the 25–50 nm gate length regime

Wolfgang Rösner, L. Dreeskornfeld, J. Hartwich, 2003 .

Nanoscale FinFETs for low power applications

Michael Specht, Johannes Kretz, Franz Hofmann, 2004 .

Planar and vertical double gate concepts

U. Langmann, Wolfgang Rösner, T. Schulz, 2002 .

Impact of technology parameters on device performance of UTB-SOI CMOS

Michael Specht, Johannes Kretz, Wolfgang Rösner, 2004 .